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Roughness Characterization of Si(110) Etched in TMAH by Atomic Force Microscopy

Published online by Cambridge University Press:  10 February 2011

Z. Moktadir ,
K. Sato ,
A. Matsumuro ,
K. Kayukawa  and
M. Shikida
Z. Moktadir
Affiliation:
Dept. Of Microsystems Engineering, Nagoya University, Nagoya, Japan
K. Sato
Affiliation:
Dept. Of Microsystems Engineering, Nagoya University, Nagoya, Japan
A. Matsumuro
Affiliation:
Dept. Of Microsystems Engineering, Nagoya University, Nagoya, Japan
K. Kayukawa
Affiliation:
Dept. Of Microsystems Engineering, Nagoya University, Nagoya, Japan
M. Shikida
Affiliation:
Dept. Of Microsystems Engineering, Nagoya University, Nagoya, Japan
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Abstract

We have investigated the roughness of a silicon (110)-oriented surface after being etched with 20% TMAH (Tetra-methyl Ammonium Hydroxide). We have used an Atomic Force Microscope to determine the roughness exponent α using three different methods: fractal, power spectrum density and scaling analysis. The value of the parameter α was identified to be close to 1/2. This value is different from the KPZ value, which is 0.4 in 2+1 dimension

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 605: Symposium MM – Materials Science of Microelectromechanical Systems Devices II , 1999 , 305
Copyright
Copyright © Materials Research Society 2000

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