Hostname: page-component-cd9895bd7-gxg78 Total loading time: 0 Render date: 2024-12-28T21:24:05.709Z Has data issue: false hasContentIssue false
  • English
  • Français

Sb2S3/SnSe thin film solar cells by thermal evaporation

Published online by Cambridge University Press:  10 September 2014

José Escorcia-García ,
Enue Barrios-Salgado ,
M.T.S. Nair  and
P.K. Nair
José Escorcia-García
Affiliation:
Instituto de Energías Renovables – UNAM, Priv. Xochicalco S/N, Temixco, Morelos 62580, México.
Enue Barrios-Salgado
Affiliation:
Instituto de Energías Renovables – UNAM, Priv. Xochicalco S/N, Temixco, Morelos 62580, México.
M.T.S. Nair
Affiliation:
Instituto de Energías Renovables – UNAM, Priv. Xochicalco S/N, Temixco, Morelos 62580, México.
P.K. Nair
Affiliation:
Instituto de Energías Renovables – UNAM, Priv. Xochicalco S/N, Temixco, Morelos 62580, México.
Get access

Abstract

We report a stable CdS/Sb2S3/SnSe heterojunction thin film solar cell deposited on SnO2:F (FTO) – coated glass substrates. Thermal evaporation at 10-5 Torr with substrate temperature of 400 °C was used to deposit Sb2S3 and SnSe thin films of 450 nm and 160 nm, respectively. Thin film Sb2S3 has an optical band gap (Eg) of 1.48 eV and photoconductivity (σp) of 4x10-7 Ω-1 cm-1 and thin film SnSe has an Eg of 1.28 eV and σp of 2 Ω-1 cm-1. The chemically deposited CdS thin film heated at 400 °C shows an Eg of 2.34 eV and σp of 0.1 Ω-1 cm-1. Stabilized solar cell structures with these thin films, FTO/CdS/Sb2S3/SnSe/C-Ag, showed open circuit voltage (Voc) of 0.60 V, short circuit current density (Jsc) of 5.51 mA/cm2 and power conversion efficiency (η) of 0.96% with a fill factor FF of 0.29. In the absence of the SnSe layer, Jsc decreases to 4.77 mA/cm2.

Keywords

thin filmcrystallinephotovoltaic
Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1670: Symposium E – Advances in the Characterization, Performance and Defect Engineering of Earth Abundant and Thin-Film Materials for Solar Energy Conversion , 2014 , mrss14-1670-e05-10
Copyright
Copyright © Materials Research Society 2014 

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

Wedemeyer, H., Michels, J., Chmielowski, R., Bourdais, S., Muto, K., Sugiura, M., Dennler, G., and Bachmann, J., Energy Environ. Sci. 6, 67 (2013).10.1039/C2EE23205GCrossRefGoogle Scholar
Fukumoto, T., Moehl, T., Niwa, Y., Nazeeruddin, Md. K., Grätzel, M., and Etgar, L., Adv. Energy Mater. 3, 29 (2012).10.1002/aenm.201200540CrossRefGoogle Scholar
Liu, C.P., Wang, H.E., Ng, T.W., Chen, Z.H., Zhang, W.F., Yan, C., Tang, Y.B., Bello, I., Martinu, L., Zhang, W.J., and Jha, S.K., Phys. Status Solidi B 249, 627 (2012).10.1002/pssb.201147393CrossRefGoogle Scholar
Messina, S., Nair, M.T.S. and Nair, P.K., J. Phys. D: Appl. Phys. 41, 095112 (2008).10.1088/0022-3727/41/9/095112CrossRefGoogle Scholar
Christians, J.A., Leighton, D.T. Jr. and Kamat, P.V., Energy Environ. Sci. 7, 1148 (2014).10.1039/C3EE43844ACrossRefGoogle Scholar
Lim, C.-S., Im, S.H., Kim, H.-J., Chang, J.A., Lee, Y.H., and Seok, S.I.., Phys. Chem. Chem. Phys. 14, 3622 (2012).10.1039/c2cp23650hCrossRefGoogle Scholar
Lefebvre, I., Szymanski, A., Olivier-Fourcade, J., and Jumas, J.C., Phy. Rev. B 58, 1896 (1998).10.1103/PhysRevB.58.1896CrossRefGoogle Scholar
Franzman, M.A., Schlenker, C.W., Thompson, M.E., and Brutchey, R.L., J.Am.Chem.Soc. 132, 4060 (2010).10.1021/ja100249mCrossRefGoogle Scholar
Mathew, N.R., Sol. Energy 86, 1010 (2012).10.1016/j.solener.2011.06.012CrossRefGoogle Scholar
Shinde, D.V., Min, S.-K., Sung, M.-M., Shrestha, N.K., Mane, R.S., Han, S.-H., Mater. Lett. 115, 244 (2014).10.1016/j.matlet.2013.10.073CrossRefGoogle Scholar
Nair, M.T.S., Nair, P.K., Zingaro, R.A., and Meyers, E.A., J. Appl. Phys. 75, 1557 (1994).10.1063/1.356391CrossRefGoogle Scholar
Schröder, D.K., “Semiconductor Metal and Device Characterization”, (Wiley-1990) pp. 597.Google Scholar
Savadogo, O. and Mandal, K.C., J. Electrochem. Soc. 141, 2871 (1994).10.1149/1.2059248CrossRefGoogle Scholar
Indirajith, R., Srinivasan, T.P., Ramamurthi, K., Gopalakrishnan, R., Curr. Appl. Phys. 10, 1402 (2010).10.1016/j.cap.2010.05.002CrossRefGoogle Scholar
Liu, C.P., Wang, H.E., Ng, T.W., Chen, Z.H., Zhang, W.F., Yan, C., Tang, Y.B., Bello, I., Martinu, L., Zhang, W.J., and Jha, S.K., Phys. Status Solidi B 249, 627 (2012).10.1002/pssb.201147393CrossRefGoogle Scholar