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Scanning Tunneling Microscope-Induced Luminescence Studies of Defects in GaN Layers and Heterostructures

Published online by Cambridge University Press:  10 February 2011

S. Evoy ,
C. K. Harnett ,
S. Keller ,
U. K. Mishra ,
S. P. DenBaars  and
H. G. Craighead
S. Evoy
Affiliation:
School of Applied and Engineering Physics, Cornell University, Ithaca, NY 14853
C. K. Harnett
Affiliation:
School of Applied and Engineering Physics, Cornell University, Ithaca, NY 14853
S. Keller
Affiliation:
Materials Department, University of California, Santa Barbara CA 93106
U. K. Mishra
Affiliation:
Materials Department, University of California, Santa Barbara CA 93106
S. P. DenBaars
Affiliation:
Materials Department, University of California, Santa Barbara CA 93106
H. G. Craighead
Affiliation:
School of Applied and Engineering Physics, Cornell University, Ithaca, NY 14853
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Abstract

We present the scanning tunneling microscope-induced luminescence (STL) imaging of defects in optoelectronic materials. Resolution is first discussed using cross-sectional images of InGaAs/GaAs quantum dots. Proof of concept is then provided through the nanometer-scale imaging of GaN layers and quantum wells. The expected λ=356±25 nm range dominates the low temperature STL of GaN. Mapping of luminescence shows circular non-emitting areas around threading dislocations. Extent of dark areas suggests a hole diffusion length of Ld=30–55 nm, in agreement with reported values. The expected λ=450±35 nm range dominates the STL from a buried InGaN/GaN multiple quantum well. Imaging reveals 30–100 nm wide smooth fluctuations of luminescence.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 588: Symposium P – Optical Microstructural Characterization of Semiconductors , 1999 , 19
Copyright
Copyright © Materials Research Society 2000

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