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Scanning Tunneling Microscopy of Nanoindentations

Published online by Cambridge University Press:  22 February 2011

Martin R. Castell  and
Timothy P. Weihs
Martin R. Castell
Affiliation:
Cavendish Laboratory, Madingley Road, Cambridge CB3 OHE, UK.
Timothy P. Weihs
Affiliation:
Department of Materials, Parks Road, Oxford OX1 3PH, UK.
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Abstract

A scanning tunneling microscopy (STM) study of low load indentations into Si, GaAs and Au is presented. Compared with standard micrographs obtained through optical microscopy and scanning electron microscopy, the STM images show greatly improved resolution in and around the indentation. The effects of relaxation and pile-up may be observed through contour plots which show inward bowing of the indentation faces in Si.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 239: Symposium D – Thin Films: Stresses and Mechanical Properties III , 1991 , 367
Copyright
Copyright © Materials Research Society 1992

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References

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