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Schottky Contacts on Annealed GaAs

Published online by Cambridge University Press:  15 February 2011

R. E. Miles ,
P. J. Tasker ,
D. V. Morgan  and
M. J. Howes
R. E. Miles
Affiliation:
Department of Electrical and Electronic Engineering, University of Leeds, Leeds LS2 9JT, (Gt. Britain)
P. J. Tasker
Affiliation:
Department of Electrical and Electronic Engineering, University of Leeds, Leeds LS2 9JT, (Gt. Britain)
D. V. Morgan
Affiliation:
Department of Electrical and Electronic Engineering, University of Leeds, Leeds LS2 9JT, (Gt. Britain)
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Abstract

Unimplanted n-type GaAs epitaxial layers have been annealed under the same conditions as those required to activate ion implants. If the duration of the anneal is sufficiently long (e.g. 10 min at 800°C) acceptor ions accumulate at the surface with a concentration of about 2×1022 m−3. Schottky contacts to annealed samples always show increased current densities up to six orders of magnitude greater than those in unannealed layers. This has the effect of lowering the Q values of varactor diodes made out of this material, up to frequencies of 1 GHz.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 18: Symposium C – Interfaces and Contacts , 1982 , 319
Copyright
Copyright © Materials Research Society 1982

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References

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