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Schottky I-V Characteristics of Au/Ni/GaN/SiNx nanonework/sapphire structures

Published online by Cambridge University Press:  01 February 2011

Jinqiao Xie ,
Yi Fu  and
Hadis Morkoç
Jinqiao Xie
Affiliation:
xiej@vcu.edu, Virginia Commonwealth University, Electrical Engineering, 601 W. Main St, Richmond, VA, 23284, United States
Yi Fu
Affiliation:
fuy@vcu.edu, Virginia Commonwealth University, Department of Electrical and Computer Engineering, Richmond, VA, 23284, United States
Hadis Morkoç
Affiliation:
hmorkoc@vcu.edu, Virginia Commonwealth University, Department of Electrical and Computer Engineering, Richmond, VA, 23284, United States
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Abstract

GaN layers on sapphire substrates were grown by metalorganic chemical vapor deposition using in situ porous SiNx nano-network. Crystalline quality of epilayers was characterized by X-ray rocking curve scans, and the full width at hall maximum values for (002) and (102) diffractions were improved from 252 arc sec and 405 arc sec, respectively, in control samples to 216 arc sec and 196 arc sec when SiNx was used. Ni/Au Schottky diodes (SDs) were fabricated and the SD performance was found to be critically dependent on the SiNx coverage (fewer and farther the pores the better the results) which is consistent with the trends of XRD and photoluminescence data. A 1.13eV barrier height was achieved when 5min SiNx layer was used compared with 0.78 eV without any SiNx nanonetwork. Furthermore, the breakdown voltage improved from 76 V to 250V when SiNx nanonetwork was used in otherwise identical structures.

Keywords

nitridemetalorganic depositionthermionic emission
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 955: Symposium I – Advances in III-V Nitride Semiconductor Materials and Devices , 2006 , 0955-I15-34
Copyright
Copyright © Materials Research Society 2007

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References

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