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Seeded Epitaxial Growth of PbTiO3 Thin Films on (001) LaAlO3 using the Chemical Solution Deposition Method

Published online by Cambridge University Press:  10 February 2011

J. H. Kim  and
F. F. Lange
J. H. Kim
Affiliation:
Materials Department, University of California, Santa Barbara, CA 93106, jhkim@engineermg.ucsb.edu
F. F. Lange
Affiliation:
Materials Department, University of California, Santa Barbara, CA 93106, flange@engineering.ucsb.edu
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Abstract

Epitaxial PbTiO3(PTO) thin films were grown on (001) LaAlO3 (LAO) substrates by a two-step process from a mixed Pb-Ti double-alkoxide solution precursor. Scanning electron microscopy, x-ray diffraction, atomic force microscopy, and transmission electron microscopy were performed to characterize the microstructure of films and to evaluate the epitaxial phenomena. In the first step, very thin PTO films were deposited and then heat treated at 800 °C for lh. The films were broken up into isolated islands that have epitaxial relationship of [100](001)PTO∥[100](001)LAO. In the second step, another PTO thin films were deposited and then annealed at temperatures between 380 °C and 800 °C for 1h. In this seeded process, epitaxial PTO thin films, unobtainable when PTO thin films were deposited on the unseeded LAO substrates, could be grown. The islands formed in the first step act as seeds for the growth of epitaxial thin film in the second step.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 493: Symposium U – Ferroelectric Thin Film VI , 1997 , 323
Copyright
Copyright © Materials Research Society 1998

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References

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