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Selected Energy Epitaxy of Gallium Nitride

Published online by Cambridge University Press:  10 February 2011

R. K. Chilukuri ,
Suian Zhang ,
E. Chen ,
R. F. Davis  and
H. H. Lamb
R. K. Chilukuri
Affiliation:
Department of Chemical Engineering, North Carolina State University, Raleigh, NC 27695–7905
Suian Zhang
Affiliation:
Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC 27695–7905
E. Chen
Affiliation:
Department of Chemical Engineering, North Carolina State University, Raleigh, NC 27695–7905
R. F. Davis
Affiliation:
Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC 27695–7905
H. H. Lamb
Affiliation:
Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC 27695–7905
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Abstract

A new apparatus for III-V nitride growth by selected energy epitaxy (SEE) is described. The multi-chamber system comprises a doubly differentially pumped molecular beam source, UHV-compatible growth chamber, x-ray photoelectron spectroscopy (XPS) chamber, UHV transfer line, and loadlock. The growth chamber is equipped for in situ quadrupole mass spectrometry and reflection high-energy electron diffraction (RHEED). Preliminary results of GaN SEE using hyperthermal beams of trimethylgallium (TMG) and ammonia (NH3) are presented.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 449: Symposium N – III-V Nitrides , 1996 , 355
Copyright
Copyright © Materials Research Society 1997

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References

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