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Selective Area Growth of GaN by MOVPE and HVPE

Published online by Cambridge University Press:  10 February 2011

K. Hiramatsu ,
H. Matsushima ,
T. Shibata ,
N. Sawaki ,
K. Tadatomo ,
H. Okagawa ,
Y. Ohuchi ,
Y. Honda  and
T. Matsue
K. Hiramatsu
Affiliation:
Mie Univ., Dept. of Electrical & Electronic Engineering, 1515 Kamihama, Tsu, Mie 514, Japan
H. Matsushima
Affiliation:
Nagoya Univ., Dept. of Electronics, Furo-cho, Chikusa-ku, Nagoya 464-01, Japan
T. Shibata
Affiliation:
Nagoya Univ., Dept. of Electronics, Furo-cho, Chikusa-ku, Nagoya 464-01, Japan
N. Sawaki
Affiliation:
Nagoya Univ., Dept. of Electronics, Furo-cho, Chikusa-ku, Nagoya 464-01, Japan
K. Tadatomo
Affiliation:
Nagoya Univ., Dept. of Electronics, Furo-cho, Chikusa-ku, Nagoya 464-01, Japan
H. Okagawa
Affiliation:
Mitsubishi Cable Industries, Ltd., Central Research Laboratory, 4-3, Ikejiri, Itami, 664, Japan
Y. Ohuchi
Affiliation:
Mitsubishi Cable Industries, Ltd., Central Research Laboratory, 4-3, Ikejiri, Itami, 664, Japan
Y. Honda
Affiliation:
Sumitomo Chemical Co., Ltd., Tsukuba Research Lab., 6 Kitahara, Tsukuba 300-32, Japan
T. Matsue
Affiliation:
Sumitomo Chemical Co., Ltd., Tsukuba Research Lab., 6 Kitahara, Tsukuba 300-32, Japan
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Abstract

Recent successful results on the selective area growth (SAG) of GaN that has been done by MOVPE and HVPE are shown. The SAG were carried out on MOVPE-grown GaN (0001) / sapphire substrates with lined or dotted SiO2 masks. Sub-micron GaN dot and line structures are fabricated by the SAG in MOVPE, so that smoothly overgrown GaN layers are successfully realized using the epitaxially lateral overgrowth (ELO) technique. The ELO structures are confirmed to be good quality GaN single crystal with a smooth surface, no grain boundaries, and low-dislocation densities. In addition, thick GaN bulk single crystals without any cracks are grown by the SAG in HVPE. Crystalline and optical properties of the GaN bulk are much improved. The reduction in the thermal strain due to the growth on the limited area as well as the ELO are found to be effective to reduce crystalline defects of the GaN bulk single crystals.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 482 , 1997 , 257
Copyright
Copyright © Materials Research Society 1998

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