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Selective Dry Etching of the GaN/InN/AlN, GaAs/AlGaAs and GaAs/InGaP Systems

Published online by Cambridge University Press:  10 February 2011

D. C. Hays ,
C. R. Abernathy ,
W. S. Hobson ,
S. J. Pearton ,
J. Han ,
R. J. Shul ,
H. Cho ,
K. B. Jung ,
F. Ren  and
Y. B. Hahn
D. C. Hays
Affiliation:
Department of Materials Science and Engineering, University of Florida, Gainesville, FL 32611
C. R. Abernathy
Affiliation:
Department of Materials Science and Engineering, University of Florida, Gainesville, FL 32611
W. S. Hobson
Affiliation:
Bell Laboratories, Lucent Technologies, Murray Hill, NJ 07974
S. J. Pearton
Affiliation:
Department of Materials Science and Engineering, University of Florida, Gainesville, FL 32611
J. Han
Affiliation:
Sandia National Laboratories, Albuquerque, NM 87185
R. J. Shul
Affiliation:
Sandia National Laboratories, Albuquerque, NM 87185
H. Cho
Affiliation:
Department of Materials Science and Engineering, University of Florida, Gainesville, FL 32611
K. B. Jung
Affiliation:
Department of Materials Science and Engineering, University of Florida, Gainesville, FL 32611
F. Ren
Affiliation:
Department of Chemical Engineering, University of Florida, Gainesville, FL 32611
Y. B. Hahn
Affiliation:
Department of Materials Science and Engineering, University of Florida, Gainesville, FL 32611
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Abstract

Selective etching of InN over GaN and AlN, and of GaAs over both AlGaAs and InGaP was examined with a number of different plasma chemistries under inductively coupled plasma conditions. Selectivities up to 55 for InN/GaN and 20 for InN/AlN were achieved in IC1/Ar discharges. For GaAs/AlGaAs, maximum selectivities of 75(with BCl3/SF6) were obtained while for GaAs/InGaP values of 80(with BCl3/SF6) and 25(with BCl3/NF3) were achieved. Selective etching of InGaP over GaAs is possible with either CH4/H2 or BI3. The selectivity is a strong function of ion flux and ion energy, and can result from two factors – either formation of a nonvolatile etch product, or a difference in bond strength between the two materials.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 573: Symposium Z – Compound Semiconductor Surface Passivation and Novel Device.. , 1999 , 281
Copyright
Copyright © Materials Research Society 1999

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References

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