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A Selective Growth of GaAs Microcrystals Grown on Se-Terminated GaAlAs Surface for the Quantum well Box Structure

Published online by Cambridge University Press:  28 February 2011

Toyohiro Chikyow  and
Nobuyuki Koguchi
Toyohiro Chikyow
Affiliation:
National Research Institute for Metals, Tsukuba Laboratories, 1–2–1 Sengen Tsukuba-shi Ibaraki 305, Japan
Nobuyuki Koguchi
Affiliation:
National Research Institute for Metals, Tsukuba Laboratories, 1–2–1 Sengen Tsukuba-shi Ibaraki 305, Japan
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Abstract

A selective growth of GaAs microcrystals was demonstrated on a Se-terminated GaAlAs surface. Ga molecules were supplied to the Se-terminated GaAlAs surface at first. The surface consisted of Ga droplets and bared Se-terminated GaAlAs surface. After the following As molecule supply to the surface, a selective GaAs microcrystal growth from Ga droplets was observed. The cross sectional investigations by the high resolution electron microscope revealed epitaxial growth of GaAs microcrystals with (111) facets and a possibility of (GaAl)2Se3, layer formation at the GaAs/Se-terminated GaAlAs interface.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 283: Symposium F – Microcrystalline Semiconductors–Materials Science and Devices , 1992 , 765
Copyright
Copyright © Materials Research Society 1993

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References

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