Hostname: page-component-745bb68f8f-f46jp Total loading time: 0 Render date: 2025-01-15T06:57:10.119Z Has data issue: false hasContentIssue false
  • English
  • Français

Selective Oxidation and Etching of Reacted Pt Films on Gaas

Published online by Cambridge University Press:  25 February 2011

Eliezer Weiss ,
Robert C. Keller ,
Margaret L. Kniffin  and
C.R. Helms
Eliezer Weiss
Affiliation:
Department of Electrical Engineering, Stanford University, Stanford, CA 94305.
Robert C. Keller
Affiliation:
Department of Electrical Engineering, Stanford University, Stanford, CA 94305.
Margaret L. Kniffin
Affiliation:
Department of Electrical Engineering, Stanford University, Stanford, CA 94305.
C.R. Helms
Affiliation:
Department of Electrical Engineering, Stanford University, Stanford, CA 94305.
Get access

Abstract

The oxidation of prereacted Pt films on (100)-oriented n-GaAs substrates was studied in the temperature range between 550 and 750°C using Auger electron spectroscopy and Xe+ ion profiling. The GaPt/PtAs2/GaAs structure formed during annealing in hydrogen was oxidized using a mixture of water vapor and hydrogen. The GaPt phase can be oxidized completely, whereas the inner PtAs2 and GaAs interfaces are left unoxidized. The oxidation of the platinum-gallium phase is self limited by the diffusion of the Ga through the gallium oxide overlayer. The oxide can be etched off to leave a structure consisting only of platinum-arsenide on the GaAs substrate.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 181: Symposium B – Advanced Metallizations in Microelectronics , 1990 , 253
Copyright
Copyright © Materials Research Society 1990

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

[1] Sands, T., Keramidas, V.G., Yu, K.M., Washburn, J., and Krishnan, K., J. Appl. Phys. 62, 2070 (1987).CrossRefGoogle Scholar
[2] Kuan, T.S., Batson, P.E., Jackson, T.N., Rupprecht, H., and Wilkie, E.L., J. Appl. Phys. 54, 6952 (1983).CrossRefGoogle Scholar
[3] Lin, J.-C., Schulz, K.J, Hsieh, K.-C., and Chang, Y.A., J. Electrochem. Soc. 136, 3006 (1989) and references therein.CrossRefGoogle Scholar
[4] Schmid-Fetzer, R., J. Electron. Mater. 17, 193 (1988) and references therein.CrossRefGoogle Scholar
[5] Kobyashi, N., Iwata, S., and Yamamoto, N., Proc. IEEE Intern. Electron Dev. Meet., Dec. 1984, p. 122.Google Scholar
[6] Sinha, A.K. and Poate, J.M., Appl. Phys. Lett., 23, 666 (1973)CrossRefGoogle Scholar
[7] Chang, C.C., Murarka, S.P., Kumar, V., and Quintana, G., J. Appl. Phys. 46, 4237 (1975).CrossRefGoogle Scholar
[8] Kumar, V., J. Phys. Chem. Solids 36, 535 (1975).CrossRefGoogle Scholar
[9] Fontaine, C., Okumura, T., and Tu, K.N.,. J Appl. Phys. 54, 1404 (1983).CrossRefGoogle Scholar
[10] Sands, T., Keramidas, V.G., Yu, A.J., Yu, K-M., Gronsky, R., and Washburn, J. J. Mater. Res. 2, 262 (1987).CrossRefGoogle Scholar
[11] Iwakuro, H. and Kuroda, T., Jap. J. Appl. Phys. 28, 223 (1989).CrossRefGoogle Scholar
[12] CRC Handbook of Chemistry and Physics, 57th ed., edited by Weast, R. C. (CRC, Boca Baton, FL, 1976–1977) p. 92.Google Scholar
[13] Lu, Z.H., Lagarde, C., Sacher, E., Currie, J.F., and Yalon, A., J. Vac. Sci. Technol. A 7, 646 (1989).CrossRefGoogle Scholar
[14] Chang, C.C., Citrin, P.H., and Schwartz, B., J. Vac. Sci. Technol. 14, 943 (1977).CrossRefGoogle Scholar