Hostname: page-component-745bb68f8f-mzp66 Total loading time: 0 Render date: 2025-01-29T23:50:33.434Z Has data issue: false hasContentIssue false
  • English
  • Français

Self-Assembling Formation of Silicon Quantum Dots by Low Pressure Chemical Vapor Deposition

Published online by Cambridge University Press:  15 February 2011

K. Nakagawa ,
M. Fukuda ,
S. Miyazaki  and
M. Hirose
K. Nakagawa
Affiliation:
Department of Electrical Engineering, Hiroshima University, Higashi-Hiroshima 739, Japan
M. Fukuda
Affiliation:
Department of Electrical Engineering, Hiroshima University, Higashi-Hiroshima 739, Japan
S. Miyazaki
Affiliation:
Department of Electrical Engineering, Hiroshima University, Higashi-Hiroshima 739, Japan
M. Hirose
Affiliation:
Department of Electrical Engineering, Hiroshima University, Higashi-Hiroshima 739, Japan
Get access

Abstract

The growth of Si dots on thermally-grown SiO2/c-Si from a thermal decomposition of pure silane has been systematically studied in the temperature range from 500 to 650°C. It has been suggested mat the Si dot height and dot diameter on as-grown SiO2 are rate-limited by the cohesive action of adsorbed precursors and the thermal decomposition of silane on Si nucleation sites, respectively. The nucleation site on as-grown SiO2 is likely to be generated by the thermal dissociation of surface Si-O bonds. It has been also found that in Si dot formation on OH-terminated SiO2 surface the nucleation density is dramatically enhanced and consequently the dot size and its distribution become small. This implies that surface OH bonds can provide the nucleation sites.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 452 , 1996 , 243
Copyright
Copyright © Materials Research Society 1997

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

[1]Hirose, M., Morita, M. and Osaka, Y., Jpn. J. Appl. Phys. 16, Suppl. 16–1, 561 (1977).Google Scholar
[2]Yuki, K., Hirai, Y., Morimoto, K., Inoue, K., Niwa, M. and Yasui, J., Jpn. J. Appl. Phys. 34, 860 (1995).Google Scholar
[3]Fukuda, M., Nakagawa, K., Miyazaki, S. and Hirose, M., Extended Abstract of 1996 Intern. Conf. on Solid State Devices and Materials (Yokohama, 1996) p. 175.Google Scholar
[4]Morimoto, K., Hirai, Y., Yuki, K. and Morita, K., Jpn. J. Appl. Phys. 35, 853 (1996).Google Scholar
[5]Yano, K., Ishii, T., Hashimoto, T., Kobayashi, T., Murai, F. and Seki, K., IEEE Transactions on Electron Devices 41, 1628 (1994).Google Scholar
[6]Tiwari, S., Rana, F., Hanafi, H., Hartstein, A., Crabbè, E.F. and Chan, K., Appl. Phys. Lett. 68, 1377 (1996).Google Scholar
[7]Nakajima, A., Sugita, Y., Kawamura, K., Tornita, H. and Yokoyama, N., Jpn. J. Appl. Phys. 35, L189 (1996).Google Scholar
[8]Sanderson, R.T. in Chemical Bonds and Bond Energy, edited by Loebl, E.M. (Academic Press Inc., New York, 1976) p. 135.Google Scholar
[9]Irani, R.R. and Callis, C.F. in Particle Size Measurement: Interpretation and Application, (Wiley, New York, 1963)Google Scholar
[10]Joyce, B.A., Brandley, R.R. and Booker, G.R., Philoso. Mag. 15, 1167 (1967).Google Scholar
[11]Philips, J.C. in Bonds and Bands in Semiconductors, edited by Alper, A.M., Margrave, J.L. and Nowick, A.S. (Academic Press Inc., New York, 1973) p. 52.Google Scholar
[12]Harrison, W.A. in Electrnic Structure and the Properties of Solids -The Physics of the Chemical Bond, edited by Renz, P. and Sargent, K. (W.H. Freeman and Company, San Fransisco, 1980) p. 171.Google Scholar
[13]Jones, D.W., Kaldis, E., Mlavsky, A.I., Shaw, D.W. and Wolff, G.A. in Crystal Growth Theory and Techniques, edited by Goodman, C.H.L. (Plenum Press, New York, 1974) p. 55Google Scholar