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Self-Interstitial clusters in silicon

Published online by Cambridge University Press:  17 March 2011

M. M. De Souza ,
M. P. Chichkine  and
E. M. Sankara Narayanan
M. M. De Souza
Affiliation:
Emerging Technologies Research Centre, De Montfort University, Leicester, United Kingdom, LE1 9BH.
M. P. Chichkine
Affiliation:
Emerging Technologies Research Centre, De Montfort University, Leicester, United Kingdom, LE1 9BH.
E. M. Sankara Narayanan
Affiliation:
Emerging Technologies Research Centre, De Montfort University, Leicester, United Kingdom, LE1 9BH.
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Abstract

In this paper we propose structural models of self-interstitial clusters in silicon using the empirical potential method. Novel, fully co-ordinated compact clusters based on the hexagonal interstitial up to size four have been proposed. The energetics of their formation indicates that energy minimisation occurs due to elimination of dangling bonds. While the conventional dangling bond model yields an exponential decrease in the formation energy with size, we observe stable defects for sizes in multiples of four. The energy barrier required for a transition from compact model to the dangling bond chain model can possibly explain the experimentally observed energy barrier for sizes greater than eight.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 610: Symposium B – Si Front End Processing - Physics & Technology..II , 2000 , B11.3
Copyright
Copyright © Materials Research Society 2000

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