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Self-Organized Composition Modulation In Omvpe Ga1−xInxAsySb1−y/GaSb Epitaxial Heterostructures

Published online by Cambridge University Press:  10 February 2011

Y-C. Chen ,
V. Bucklen ,
K. Rajan ,
C. A. Wang ,
G. W. Charache ,
G. Nichols ,
M. Freeman  and
P. Sander
Y-C. Chen
Affiliation:
Department of Materials Science & Engineering, Rensselaer Polytechnic Institute, Troy NY
V. Bucklen
Affiliation:
Department of Materials Science & Engineering, Rensselaer Polytechnic Institute, Troy NY
K. Rajan
Affiliation:
Department of Materials Science & Engineering, Rensselaer Polytechnic Institute, Troy NY
C. A. Wang
Affiliation:
Lincoln Laboratory, Massachusetts Institute of Technology, Lexington MA
G. W. Charache
Affiliation:
Lockheed-Martin, Schenectady NY
G. Nichols
Affiliation:
Lockheed-Martin, Schenectady NY
M. Freeman
Affiliation:
Lockheed-Martin, Schenectady NY
P. Sander
Affiliation:
Lockheed-Martin, Schenectady NY
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Abstract

Microstructures of lattice-matched Ga1−xInxAsySb1−y grown by organometallic vapor phase epitaxy (OMVPE) on (100) 6°→ (111)B GaSb substrates have been examined in detail by transmission electron microscopy. A three-dimensional self-organized composition modulation (SOCM) microstructure was found with an orientation inclined 10 degrees to the surface orientation when viewed in (011) cross-section. The periodicity of the SOCM increased from ˜13 nm to 20 nm, as x increased from 0.1 to 0.2 while the orientation of the SOCM remained the same. The fact that the orientation was not sensitive to the component composition indicated that substrate misorientation plays a major role in deciding this SOCM orientation. This may open fabrication opportunities for three-dimensional natural superlattices by engineering on the substrate misorientation.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 583 , 1999 , 367
Copyright
Copyright © Materials Research Society 2000

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References

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