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Self-Organized Superlattices in GaInAsSb Grown on Vicinal Substrates

Published online by Cambridge University Press:  01 February 2011

C.A. Wang ,
C.J. Vineis  and
D.R. Calawa
C.A. Wang
Affiliation:
Lincoln Laboratory, Massachusetts Institute of Technology, Lexington, MA 02420–9108
C.J. Vineis
Affiliation:
now at AmberWave Systems Corporation, Salem, NH 03079
D.R. Calawa
Affiliation:
Lincoln Laboratory, Massachusetts Institute of Technology, Lexington, MA 02420–9108
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Abstract

Self-organized superlattices are observed in GaInAsSb epilayers grown lattice matched to vicinal GaSb substrates. The natural superlattice (NSL) is oriented at a slight angle of about 4° with respect to the vicinal (001) GaSb substrate. This vertical composition modulation is detected at the onset of growth. Layers in the NSL are continuous over the lateral extent of the substrate. Furthermore, the NSL persists throughout several microns of deposition. The NSLs have a period ranging from 10 to 30 nm, which is dependent on deposition temperature and GaInAsSb alloy composition. While the principle driving force for this type of phase separation is chemical, the mechanism for the self-organized microstructure is related to local strains associated with surface undulations. By using a substrate with surface undulations, the tilted NSL can be induced in layers with alloy compositions that normally do not exhibit this self-organized microstructure under typical growth conditions. These results underscore the complex interactions between compositional modulation and morphological perturbations.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 794: Symposium T – Self-Organized Processes in Semiconductor Heteroepitaxy , 2003 , T9.6
Copyright
Copyright © Materials Research Society 2004

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