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Semiconductor Devices and Materials for Optical Communication at 2-4 μM Wavelengths Range

Published online by Cambridge University Press:  25 February 2011

Gan Fuxi  and
Wang Hailong
Gan Fuxi
Affiliation:
Shanghai Institute of Optics and Fine Mechanics, Academia Sinica P.O.Box 800-216 Shanghai 201800, China
Wang Hailong
Affiliation:
Shanghai Institute of Optics and Fine Mechanics, Academia Sinica P.O.Box 800-216 Shanghai 201800, China
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Abstract

In this paper we reported most attractive semiconductor materials for optical sources and detectors with wavelength In the range of 2-4 μm, such as GaInAsSb/GaAlAsSb, InAsPSb/InAs heterostructure and PbCdSSe HgCdTe.The Lasers and detectors have been made using these materials. The performance of the devices were discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 216: Symposium T – Long-Wavelength Semiconductor Devices, Materials and Processes , 1990 , 187
Copyright
Copyright © Materials Research Society 1991

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References

(1) Tran, D.C., Sigel, G.H. Jr., andBendow, B., J. Lightwave Technol. LT- 2, 566 (1984).CrossRefGoogle Scholar
(2) Lines, M.E., Science 226, 663 (1984).CrossRefGoogle Scholar
(3) Joullie, A., Jia Hua, F., Karouta, F., Mani, H. and Alibert, C., SPIE. 587, 46 (1985).Google Scholar
(4) Koguchi, Nobuyuki, Takahashi, Satoshi and Kiyosawa, Teruo, JAP. J. of Appl Phys 27, L2376 (1988).Google Scholar
(5) Soderman, D.A. and Pinkston, W.H., Appl Optics 11, 2162 (1972).CrossRefGoogle Scholar
(6) Caneau, C., Srivastava, A.K., Dentai, A.G., Zyskind, J.L., Burrus, C.A., andPollack, M.A., Electron. Lett 22, 992 (1986).Google Scholar
(7) Caneau, C., Srivastava, A.K., Zyskind, J.L., Sulhoff, J.W., Dentai, A.G. and Pollack, M.A., Appl.Phys.Lett. 49, 55 (1986).Google Scholar
(8) France, B.W., Carter, S.F., Moore, M.W., andWilliams, J.R., SPIE. 618, 51 (1986).Google Scholar
(9) Fukui, T. and Horikoushi, Y., Jpn.J.Appl.Phys. 20,2301 (1981).Google Scholar
(10) Yonggang, Zhang, Ping, Zhou, Huiying, Chen and Huizhen, Pan, Rare Metals 9, 46 (1990).Google Scholar
(11) Changchun, Jin, Yongzhen, Wang, Guijin, Lu, Tifeng, Wang, Jinxin, Jiang and Hailong, Wang, “Liquid phase epitaxial growth of lnAsPSb for laser emission 'in 2-4um wavelength region”, to be published.Google Scholar
(12) Yonggang, Zhang, Ping, Zhou, Ying, Zhou and Huizhen, Pan, “Investigation of InAsPSb/InAs high speed mid-infrared photodetector”, to be published.Google Scholar
(13) Koguchi, N., Kiyosawa, T. and Takahashi, S., J. Crystal Growth 81, 400 (1987).CrossRefGoogle Scholar
(14) Felming, Tong, Xiuzhen, Yang, Siyuan, Chen, “HgCdTe detector at operating of room temperature”, private communication.Google Scholar