Hostname: page-component-78c5997874-m6dg7 Total loading time: 0 Render date: 2024-11-10T08:34:03.185Z Has data issue: false hasContentIssue false
  • English
  • Français

Shadow Nanosphere Lithography: Simulation and Experiment

Published online by Cambridge University Press:  15 February 2011

Michael Giersig
Michael Giersig*
Affiliation:
Caesar Research Center Ludwig-Erhard-Allee 2 53175 Bonn Germany
Get access

Abstract

The creation of two dimensional large-areas of nanoparticles of different morphology and ordering is still a not fully solved problem. The presented paper shows new outstanding methods based on nanosphere lithography for controlling the mask morphology to improve fabrication of nanoscales perfectly ordered over some cm2 dots, rods and rings. An annealed mask with 30nm aperatures was used for the fabrication of ferromagnetic iron nanorings. These nanosystems are expected to find various unique applications. Our method permitted fabrication of nanostructured materials with unique morphology and properties. This field is expected to open new venues in science and technology.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 879: Symposium Z – Chemistry of Nanomaterial Synthesis and Processing , 2005 , Z6.1
Copyright
Copyright © Materials Research Society 2005

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Deckman, H. W.; Dunsmir, J. H. Appl. Phys. Lett. 1982, 41, 377.Google Scholar
2. Giersig, M.; Mulvaney, P. Langmuir 1993, 9, 3408.Google Scholar
3. Deckman, H.W.; Dunsmuir, J.H. Appl. Phys. Lett. 1982, 4, 377.Google Scholar
4. Hulteen, J.C.; Van Duyne, R.P.; J. Vac. Sci. Technol. A 1995, 3, 1553.Google Scholar
5. Winzer, M.; Kleiber, M.; Dix, N.; Wiesendanger, R., Appl. Phys. A 1996, 63, 617.Google Scholar
6. Micheletto, R.; Fukuda, H.; Ohtsu, M.; Langmuir 1995, 11, 3333.Google Scholar
7. Burmeister, F.; Badowsky, W.; Braun, T.; Wieprich, S.; Boneberg, J.; Leiderer, P.; Appl. Surf. Sci. 1999, 461, 144.Google Scholar
8. Denkov, N.D.; Velev, O.D.; Kralchevsky, P.A.; Ivanov, I.B.; Yoshimura, H.; Nagayama, K. Langmuir 1992, 8, 3183.Google Scholar
9. Kosiorek, Adam, Kandulski, Witold, Chudzinski, Piotr, Kempa, Krzysztof, Giersig, Michael, Nano letters 2004, 4, 1359.Google Scholar
10. , FengYan, Goedel, Werner A., Nano Letters 2004, 4, 1193.Google Scholar
11. McLellan, J.; Geissler, M. and Xia, Y., J. Am. Chem. Soc. 2004, 126, 10830.Google Scholar
12 lopez-Diaz, L., Rothman, J., Klaui, M. and Bland, J. A. C., IEEE Trans. Magn. 2000, 36, 3155.Google Scholar
13. lopez-Diaz, L., Rothman, J., Klaui, M. and Bland, J. A. C., J. Appl. Phys. 2000, 87, 6668.Google Scholar
14.OOMMF software available at http://math.nist.gov/oommf (16The standard electron beam evaporation (EBE) system was modified to ensure control over the evaporation angle Θ and the sample rotation at the same time (see Fig.1).Google Scholar
15. Kosiorek, A.; Kandulski, W.; Glaczynska, H.; Giersig, M. small 2005, 439–444 Google Scholar