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Shallow Ohmic Contacts to p-InGaAs Based on Pd/Ge with Implanted Zn or Cd

Published online by Cambridge University Press:  21 February 2011

P. Ressel ,
H. Strusny ,
D. Fritzsche ,
H. Kräutle  and
K. Mause
P. Ressel
Affiliation:
Ferdinand-Braun-Institut für Höchstfrequenztechnik, Rudower Chaussee 5, D-12489 Berlin, Germany
H. Strusny
Affiliation:
Ferdinand-Braun-Institut für Höchstfrequenztechnik, Rudower Chaussee 5, D-12489 Berlin, Germany
D. Fritzsche
Affiliation:
Telekom FTZ, Am Kavalleriesand 3, D-64295 Darmstadt, Germany
H. Kräutle
Affiliation:
Telekom FTZ, Am Kavalleriesand 3, D-64295 Darmstadt, Germany
K. Mause
Affiliation:
Telekom FTZ, Am Kavalleriesand 3, D-64295 Darmstadt, Germany
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Abstract

The development of shallow ohmic contacts for the thin p-InGaAs layer (p≤1*1019 cm−5) of InP-based heterojunction bipolar transistors is a severe challenge to contact technology. While standard metallizations reveal several drawbacks, Pd/Ge-based systems emerged as promising candidates. In this work, Zn or Cd was implanted into the inner Pd contact layer for lowering contact resistivity. We present a study of the electrical and metallurgical properties of Pd/Ge contacts to p-InGaAs, and the influence of Zn and Cd implanted into the metallization. The resistivity of implanted and annealed (450-575 °C) contacts is reduced up to one order of magnitude compared to the unimplanted contact. Backside SIMS measurements show that annealing leads to a very limited interdiffusion at the interface. Cd and Zn diffuse into the InGaAs layer to a depth of approx. 30 and 40 nm, respectively. Due to these features, this implanted Pd/Ge contact scheme is a promising candidate for shallow contacts to p-InGaAs.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 318: Symposium Ca – Interface Control of Electrical, Chemical, and Mechanical Properties , 1993 , 177
Copyright
Copyright © Materials Research Society 1994

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References

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