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SiC Precipitate Formation During High Dose Carbon Implantation Into Silicon

Published online by Cambridge University Press:  15 February 2011

J. K. N. Lindner ,
K. Volz  and
B. Stritzker
J. K. N. Lindner
Affiliation:
Universität Augsburg, Institut für Physik, D-86135 Augsburg, Germany
K. Volz
Affiliation:
Universität Augsburg, Institut für Physik, D-86135 Augsburg, Germany
B. Stritzker
Affiliation:
Universität Augsburg, Institut für Physik, D-86135 Augsburg, Germany
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Abstract

The formation of SiC precipitates during the high-dose implantation of carbon ions into Si(100) is studied by means of TEM for implantation conditions, which are suitable for the ion beam synthesis of buried SiC layers in silicon. It is observed that in crystalline silicon nm-sized epitaxially oriented 3C-SiC precipitates are formed which are almost identical in size, nearly independent of the depth and dose (4 – 9 ×1017 C+/cm2). With increasing dose, it is mainly the density of precipitates which increases. Amorphization of the silicon host lattice leads to depth intervals with a strongly decreased density of oriented crystalline SiC precipitates. The irradiation induced formation of larger randomly oriented SiC crystallites is observed to occur in amorphized regions after prolonged implantation. Both the irradiation induced destruction and formation of SiC precipitates contribute to the generation of a nearly box-shaped precipitate density distribution at doses near the stoichiometry dose.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 439: Symposium B – Microstructure Evolution During Irradiation , 1996 , 173
Copyright
Copyright © Materials Research Society 1997

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References

[1] Mantl, S., Mater. Sci. Rep. 8 (1992) 1.Google Scholar
[2] Morkoç, H., Strite, S., Gao, G.B., Lin, M.E., Sverdlov, B., Burns, M., J. Appl.Phys. 76 (1994) 1363.Google Scholar
[3] Wesch, W., Nucl. Instr. and Meth. B 116 (1996) 305.Google Scholar
[4] Borders, J.A., Picraux, S.T., and Beezhold, W., Appl. Phys. Lett. 18 (1971) 509.Google Scholar
[5] Lindner, J.K.N., Frohnwieser, A., Rauschenbach, B., and Stritzker, B., Mater. Res. Soc. Symp. Proc. 354 (1995) 171.Google Scholar
[6] Lindner, J.K.N., Gotz, B., Frohnwieser, A., and Stritzker, B., Mater. Res. Soc. Symp. Proc. 396 (1996) 877.Google Scholar
[7] Lindner, J.K.N., Volz, K., and Stritzker, B., Inst. Phys. Conf. Ser. 142 (1996) 145.Google Scholar
[8] Preckwinkel, U., Lindner, J.K.N., Rauschenbach, B., Stritzker, B., Nucl. Instr. and Meth.B, in press.Google Scholar
[9] Volz, K., Lindner, J.K.N., and Stritzker, B., Nucl. Instr. and Meth. B, in press.Google Scholar
[10] Lindner, J.K.N., Klassen, T., and Kaat, E.H. te, Nucl. Instr. and Meth. B 59/60 (1991) 655.Google Scholar
[11] Hasebe, M., Oshima, R., and Fujita, F.E., Jpn. J. Appl. Phys. 25 (1986) 159.Google Scholar
[12] Liefting, J.R., Custer, J.S., Saris, F.W., Mater. Res. Soc. Symp. Proc. 235Google Scholar
[13] Reeson, K.J., Hemment, P.L.F., Stoemenos, J., Davis, J., Celler, G., Appl. Phys. Lett. 51 (1987)2242.Google Scholar
[14] Götz, B., Lindner, J.K.N., and Stritzker, B., accepted for publ. in Nucl. Instr. and Meth. BGoogle Scholar
[15] Volz, K., Lindner, J.K.N., and Stritzker, B., accepted for publ. in Mater. Sci. For.Google Scholar
[16] Csepregi, L., Kennedy, E.F., Mayer, J.W., and Sigmon, T.W., J. Appl. Phys. 49 (1978) 3906.Google Scholar
[17] Calcagno, L., Compagnini, G., Grimaldi, M., Foti, G., P.Musumeci, Nucl. Instr. and Meth., in press.Google Scholar