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SiC Thin Films by Chemical Conversion of Single Crystal Si

Published online by Cambridge University Press:  15 February 2011

Chien C. Chiu ,
Chi Kong Kwok  and
Seshu B. Desu
Chien C. Chiu
Affiliation:
Department of Materials Science and EngineeringVirginia Polytechnic Institute and State UniversityBlacksburg, VA 24061
Chi Kong Kwok
Affiliation:
Department of Materials Science and EngineeringVirginia Polytechnic Institute and State UniversityBlacksburg, VA 24061
Seshu B. Desu
Affiliation:
Department of Materials Science and EngineeringVirginia Polytechnic Institute and State UniversityBlacksburg, VA 24061
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Abstract

The reaction of (100)Si with C2H2 in a hot wall CVD reactor has been studied using a X-ray photolectron spectroscopy, and a scanning electron microscopy. The growth of the SiC films was observed through the behavior of Si2p peaks and their plasmons. Smooth surface morphology with a monolayer of SiC was obtained at 950°C for 7 minutes and defects were observed for longer reaction times at this temperature. For higher reaction temperatures (e.g. 1000°C), defects were observed for reaction times as short as 10 seconds. The formation of defects was correlated to the out-diffusion of Si in the carborization process.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 250: Symposium R – Chemical Vapor Deposition of Refractory Metals and Ceramics II , 1991 , 179
Copyright
Copyright © Materials Research Society 1992

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