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Silicon based core-shell silicon nanowires for broadband and wide angle antireflection

Published online by Cambridge University Press:  18 March 2013

P. Pignalosa ,
H. Lee ,
W. Guo ,
X. Duan  and
Y. Yi
P. Pignalosa
Affiliation:
New York University, New York, NY City University of New York, SI/GC, New York, NY
H. Lee
Affiliation:
Beijing University of Science and Technology, Beijing
W. Guo
Affiliation:
City University of New York, SI/GC, New York, NY
X. Duan
Affiliation:
Massachusetts Institute of Technology, Cambridge, MA
Y. Yi*
Affiliation:
New York University, New York, NY City University of New York, SI/GC, New York, NY Massachusetts Institute of Technology, Cambridge, MA
*
*e-mail:yys@alum.mit.edu
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Abstract

Antireflection with broadband and wide angle properties is important for a wide range of applications on photovoltaic cells and display. The SiOx shell layer provides a natural antireflection from air to the Si core absorption layer. In this work, we have demonstrated the random core-shell silicon nanowires with both broadband (from 400nm to 900nm) and wide angle (from normal incidence to 60°) antireflection characteristics within AM1.5 solar spectrum. The graded index structure from the randomly oriented core-shell (Air/SiOx/Si) nanowires may provide a potential avenue to realize a broadband and wide angle antireflection layer.

Keywords

nanostructureoptoelectronicsemiconducting
Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1510: Symposium DD – Group IV Semiconductor Nanostructures and Applications , 2013 , mrsf12-1510-dd05-13
Copyright
Copyright © Materials Research Society 2013

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