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Silicon Interposer Reliability Optimization through Process-Oriented Stress Modeling

Published online by Cambridge University Press:  30 July 2012

Sri Ramakanth Kappaganthu ,
Aditya Karmarkar  and
Xiaopeng Xu
Sri Ramakanth Kappaganthu
Affiliation:
Synopsys (India) Private Limited, Hyderabad, Andhra Pradesh 500032, India
Aditya Karmarkar
Affiliation:
Synopsys (India) Private Limited, Hyderabad, Andhra Pradesh 500032, India
Xiaopeng Xu
Affiliation:
Synopsys, Inc. 700 East Middlefield Road, Mountain View, CA 94043, U.S.A.
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Abstract

A process-oriented stress modeling methodology is developed to investigate the stress evolution during the silicon interposer packaging process. An FEM based 3D TCAD simulator is used to perform the process steps to construct the silicon interposer stack in sequential order. These steps include TSV fabrication for passive silicon interposer, micro-bumping and reflow process for integrating active dies and passive interposer, C4-bumping and reflow for interposer BT-substrate stacking, and epoxy mold curing for interposer encapsulation. Stress simulations are carried out for each process step to obtain accurate stress evolution history. To resolve micron features within millimeter structures, the modeling strategy employs symmetry conditions, and equivalent materials for regions away from structure features of interest. The detailed structure includes 3x3 arrays of microbumps, TSV arrays, and C4-bumps with multiple material layers at the stack corner. Important design parameters include interposer thickness and edge clearance. For different silicon interposer configurations critical stresses in the outmost microbump and C4-bump are analyzed and compared. The reliability implications are discussed.

Keywords

packagingstructuralsimulation
Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1428: Symposium C – “Interconnect Challenges for CMOS Technology--Materials, Processes and Reliability for Downscaling, Packaging and 3D Stacking” , 2012 , mrss12-1428-c10-04
Copyright
Copyright © Materials Research Society 2012

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References

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