Hostname: page-component-78c5997874-t5tsf Total loading time: 0 Render date: 2024-11-13T02:24:42.733Z Has data issue: false hasContentIssue false
  • English
  • Français

Silicon Nanocrystal Nucleation as a Function of the Annealing Temperature in SiOx Films

Published online by Cambridge University Press:  10 February 2011

N. Daldosso ,
G. Das ,
G. Dalba ,
S. Larcheri ,
R. Grisenti ,
G. Mariotto ,
L. Pavesi ,
F. Rocca ,
F. Priolo  and
G. Franzò
...Show all authors
N. Daldosso
Affiliation:
INFM-Dipartimento di Fisica, Università di Trento, via Sommarive 14, I-38050 Povo (Trento)
G. Das
Affiliation:
INFM-Dipartimento di Fisica, Università di Trento, via Sommarive 14, I-38050 Povo (Trento)
G. Dalba
Affiliation:
INFM-Dipartimento di Fisica, Università di Trento, via Sommarive 14, I-38050 Povo (Trento)
S. Larcheri
Affiliation:
INFM-Dipartimento di Fisica, Università di Trento, via Sommarive 14, I-38050 Povo (Trento)
R. Grisenti
Affiliation:
INFM-Dipartimento di Fisica, Università di Trento, via Sommarive 14, I-38050 Povo (Trento)
G. Mariotto
Affiliation:
INFM-Dipartimento di Fisica, Università di Trento, via Sommarive 14, I-38050 Povo (Trento)
L. Pavesi
Affiliation:
INFM-Dipartimento di Fisica, Università di Trento, via Sommarive 14, I-38050 Povo (Trento)
F. Rocca
Affiliation:
CNR-IFN, Sezione “CeFSA” di Trento, I-38050 Povo (Trento), Italy
F. Priolo
Affiliation:
INFM-Dipartimento di Fisica, Università di Catania, Via S. Sofia 64, I-95123 Catania, Italy
G. Franzò
Affiliation:
INFM-Dipartimento di Fisica, Università di Catania, Via S. Sofia 64, I-95123 Catania, Italy
A. Irrera
Affiliation:
INFM-Dipartimento di Fisica, Università di Catania, Via S. Sofia 64, I-95123 Catania, Italy
M. Miritello
Affiliation:
INFM-Dipartimento di Fisica, Università di Catania, Via S. Sofia 64, I-95123 Catania, Italy
D. Pacifici
Affiliation:
INFM-Dipartimento di Fisica, Università di Catania, Via S. Sofia 64, I-95123 Catania, Italy
F. Iacona
Affiliation:
CNR-IMM, Sezione di Catania, Stradale Primosole 50, I-95121 Catania, Italy
Get access

Abstract

Si nanocrystals (Si-nc) embedded in amorphous silica matrix have been obtained by thermal annealing of substoichiometric SiOx films, deposited by PECVD (plasma enhanced chemical vapour deposition) technique with different amount of Si concentrations (42 and 46 at.%). Both nucleation and evolution of Si-nc together with the changes of the amorphous matrix have been studied as a function of the annealing temperature. The comparison of x-ray absorption measurements in Total Electron Yield (TEY) mode at the Si k-edge with photoluminescence (PL), FTIR and Raman spectra, allowed clarifying the processes of Si-nc formation and structural evolution as a function of the annealing temperature and Si content.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 770: Symposium I – Optoelectronics of Group-IV-Based Materials , 2003 , I1.3
Copyright
Copyright © Materials Research Society 2003

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Dinh, L.N., Chase, L.L., Balooch, M., Terminello, L., and Wooten, F., Appl. Phys. Lett. 3111, 3111 (1994).Google Scholar
2. Inokuma, T., Wakayama, Y., Muramoto, T., Aoki, R., Kurata, Y., and Hasegawa, S., J. Appl. Phys. 2228, 2228 (1998).Google Scholar
3. Garrido, B., Lopez, M., Gonzalez, O., Perez-Rodriguez, A., Morante, J.R., and Bonafos, C., Appl. Phys. Lett. 3143, 3143 (2000).Google Scholar
4. Prakash, G. Vijaya, et al., J. Nanosci. Nanotech. 159, 159 (2001).Google Scholar
5. Iacona, F., Franzò, G., and Spinella, C., J. Appl. Phys. 1295, 1295 (2000).Google Scholar
6. Pavesi, L., Negro, L. Dal, Mazzoleni, C., Franzò, G., and Priolo, F., Nature 440, 440 (2000); L. Dal Negro et al., Physica E 297, 297 (2003).Google Scholar
7.Towards the First Silicon Laser edited by Pavesi, Lorenzo, Gaponenko, Sergey and Negro, Luca Dal, Nato Science Series II, Mathematics, Physics and Chemistry vol. 93 (Kluwer Academic Publisher, Dordrecht 2003)Google Scholar
8. Iacona, F., Lombardo, S., and Campisano, S., J. Vac. Sci. Technol. B 2693, 2693 (1996).Google Scholar
9. Erbil, A., III, G. S. Cargill, Frahm, R., and Boehme, R. F., Phys. Rev. B 2450, 2450 (1988).Google Scholar
10. Dalba, G., Daldosso, N., Fornasini, P., Grisenti, R., Pavesi, L., Rocca, F., Franzò, G., Priolo, F., and Iacona, F., Appl. Phys. Lett. 889, 889 (2003).Google Scholar
11. Gusev, E.P., Lu, H.C., Garfunkel, E.L., Gustafsson, T., and Green, M.L., “Growth and characterization of ultrathin nitrided oxide films”, IBM J. Res. Develop. 265, 265 (1999).Google Scholar
12. Price, K.J., McNeil, L.E., Suvkanov, A., Irene, E.A., MacFarlane, P.J., and Zvanut, M.E., J. Appl. Phys. 2628, 2628 (1999).Google Scholar
13. Prakash, G. Vijaya, Cazzanelli, M., Gaburro, Z., Pavesi, L., Iacona, F., Franzò, G., and Priolo, F., J. Mod. Opt. 719, 719 (2002).Google Scholar
14. Ehara, T. and Machida, S., Thin Sol. Films 275, 275 (1999).Google Scholar
15. Sassella, A., Borghesi, A., Corni, F., Monelli, A., Ottaviani, G., Tonini, R., Pivac, B., Bacchetta, M., Zanotti, L., J. Vac. Sci. Technol. A 377, 377 (1997).Google Scholar
16. Khriachtchev, L., Kilpela, O., Karirinne, S., Keranen, J. and Lepisto, T., Appl. Phys. Lett. 323, 323 (2001).Google Scholar