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Silicon nanowires solar cell

Published online by Cambridge University Press:  11 March 2011

Xiaobing Xie ,
Xiangbo Zeng ,
Wenjie Yao ,
Ping Yang ,
Shiyong Liu ,
Wenbo Peng ,
Chao Wang ,
Xingwang Zhang ,
Hongliang Zhu  and
Zhanguo Wang
Xiaobing Xie
Affiliation:
Key Laboratory of Semiconductor Material Science, Institute of Semiconductors, Chinese Academy of Sciences, East Qinghua road 35A, Haidian District, Beijing 100083, China
Xiangbo Zeng
Affiliation:
Key Laboratory of Semiconductor Material Science, Institute of Semiconductors, Chinese Academy of Sciences, East Qinghua road 35A, Haidian District, Beijing 100083, China
Wenjie Yao
Affiliation:
Key Laboratory of Semiconductor Material Science, Institute of Semiconductors, Chinese Academy of Sciences, East Qinghua road 35A, Haidian District, Beijing 100083, China
Ping Yang
Affiliation:
Key Laboratory of Semiconductor Material Science, Institute of Semiconductors, Chinese Academy of Sciences, East Qinghua road 35A, Haidian District, Beijing 100083, China
Shiyong Liu
Affiliation:
Key Laboratory of Semiconductor Material Science, Institute of Semiconductors, Chinese Academy of Sciences, East Qinghua road 35A, Haidian District, Beijing 100083, China
Wenbo Peng
Affiliation:
Key Laboratory of Semiconductor Material Science, Institute of Semiconductors, Chinese Academy of Sciences, East Qinghua road 35A, Haidian District, Beijing 100083, China
Chao Wang
Affiliation:
Key Laboratory of Semiconductor Material Science, Institute of Semiconductors, Chinese Academy of Sciences, East Qinghua road 35A, Haidian District, Beijing 100083, China
Xingwang Zhang
Affiliation:
Key Laboratory of Semiconductor Material Science, Institute of Semiconductors, Chinese Academy of Sciences, East Qinghua road 35A, Haidian District, Beijing 100083, China
Hongliang Zhu
Affiliation:
Key Laboratory of Semiconductor Material Science, Institute of Semiconductors, Chinese Academy of Sciences, East Qinghua road 35A, Haidian District, Beijing 100083, China
Zhanguo Wang
Affiliation:
Key Laboratory of Semiconductor Material Science, Institute of Semiconductors, Chinese Academy of Sciences, East Qinghua road 35A, Haidian District, Beijing 100083, China
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Abstract

We made an amorphous-silicon (a-Si) solar cell with a nanowire-array structure on stainless steel(SS) by plasma enhanced chemical vapor (PECVD) deposition. This nanowire structure has an n-type Si nanowire array in which a-Si intrinsic layer and p type layer are sequentially grown on the surface of the nanowire. The highest open-circuit voltage (Voc) and short-circuit current density (Jsc) for AM 1.5 illumination were 620 mV and 13.4 mA/cm2, respectively at a maximum power conversion efficiency of 3.57%.

Keywords

Siphotovoltaicnanostructure
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1305: Symposium AA – Group IV Semiconductor Nanostructures and Applications , 2011 , mrsf10-1305-aa17-07
Copyright
Copyright © Materials Research Society 2011

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References

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