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Silicon on Insulator by High Dose Implantation

Published online by Cambridge University Press:  21 February 2011

P. L. F. Hemment
P. L. F. Hemment*
Affiliation:
Department of Electronic and Electrical Engineering, University of Surrey, Guildford, GU2 5XH, U.K.
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Abstract

Silicon on insulator structures consisting of a buried dielectric, formed by the implantation of high doses of oxygen ions, have been shown to be suitable substrates for LSI circuits. The substrates are compatible with present silicon processing technologies and are confidently expected to be suitable for VLSI circuits. In this paper the microstructure and physical properties of this SOI material will be described and the dependence of these characteristics upon the implantation conditions and subsequent thermal processing will be discussed. With this information, it is then possible to outline the specification for a high current oxygen implanter.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 33: Symposium D – Comparison of Thin Film Transistor and SOI Technologies , 1984 , 41
Copyright
Copyright © Materials Research Society 1984

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