Hostname: page-component-745bb68f8f-kw2vx Total loading time: 0 Render date: 2025-01-30T00:02:20.194Z Has data issue: false hasContentIssue false
  • English
  • Français

Silicon Surface Passivation for Heteroepitaxy by Hydrogen Termination

Published online by Cambridge University Press:  25 February 2011

D.B. Fenner ,
D.K. Biegelsen ,
R.D. Bringans  and
B.S. Krusor
D.B. Fenner
Affiliation:
Xerox Palo Alto Research Center, Palo Alto, CA 94304. Physics Dept., Santa Clara Univ., Santa Clara, CA 95053.
D.K. Biegelsen
Affiliation:
Xerox Palo Alto Research Center, Palo Alto, CA 94304.
R.D. Bringans
Affiliation:
Xerox Palo Alto Research Center, Palo Alto, CA 94304.
B.S. Krusor
Affiliation:
Xerox Palo Alto Research Center, Palo Alto, CA 94304.
Get access

Abstract

Results are reported for XPS and LEED evaluations of Si(100) wafers cleaned, etched, andhydrogen terminated by various low — temperature, wet — chemical techniques. We have obtained especially promising results with the JPL spin — etch technique. Under quite practical tolerances for the spin etch, our XPS measurements indicate about lx10-2 monolayer (ML) of total residue. The LEED showed sharp spots in a (1x1) pattern. We review our experimental results and suggest an interpretation in termsof both the chemistry of silicon surfaces in contact with HF in a polar solvent, and thehydrodynamics of liquids on spinning surfaces.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 148: Symposium D – Chemistry and Defects in Semiconductor Heterostructures , 1989 , 279
Copyright
Copyright © Materials Research Society 1989

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Yablonovich, E., Allara, D.L., Chang, C.C., Gmitter, T., and Bright, T.B., Phys.Rev.Lett. 57, 249 (1986).CrossRefGoogle Scholar
2. Burrows, V.A., Chabal, Y.J., Higashi, G.S., Raghavachari, K., and Christman, S.B., Appl.Phys. Lett. 53, 998 (1988).CrossRefGoogle Scholar
3. Grunthaner, F.J. and Maserjian, J., in The Physics of SiO2 and Its Interfaces, edited by Pantelides, S.T. (Pergamon, New York, 1987) p. 389. F.J. Grunthaner and P.J. Grunthaner, Mat.Sci.Reports 1, 65 (1986). W.J. Kaiser, L.D. Bell, M.H. Hecht, and F.J. Grunthaner, J.Vac.Sci.Technol. A6, 519 (1988).Google Scholar
4. Fenner, D.B., Biegelsen, D.K., and Bringans, R.D., J.Appl.Phys., in press (accepted 14 Mar 1989).Google Scholar
5. Krusor, B.S., Biegelsen, D.K. and Yingling, R.D., J.Vac.Sci.Technol. B7, 129 (1989).CrossRefGoogle Scholar
6. Adamson, A.W., Physical Chemistry of Surfaces, 4th ed. (J.Wiley, N.Y., 1982).Google Scholar
7. Cotton, F.A. and Wilkinson, G., Advanced Inorganic Chemistry, 3rd ed. (J.Wiley, N.Y., 1972)Google Scholar
8. Maroncelli, M., MacInnis, J., and Fleming, G.R., Science 243, 1674 (1989).CrossRefGoogle Scholar
9. Middleman, S., J.Appl.Phys. 62, 2530 (1987).CrossRefGoogle Scholar