Hostname: page-component-78c5997874-xbtfd Total loading time: 0 Render date: 2024-11-10T08:47:21.500Z Has data issue: false hasContentIssue false
  • English
  • Français

Sil−xGex/Si Multiple Quantum Well Wires Fabricated Using Selective Etching

Published online by Cambridge University Press:  15 February 2011

Shi Yi ,
Wang Feng ,
Liu Jianlin ,
Zhang Rong ,
Gu Shulin ,
Zhu Shunming ,
Hu Lique  and
Zheng Youdou
Shi Yi
Affiliation:
Department of Physics and Institute of Solid State Physics, Nanjing 210008, P.R. China
Wang Feng
Affiliation:
Department of Physics and Institute of Solid State Physics, Nanjing 210008, P.R. China
Liu Jianlin
Affiliation:
Department of Physics and Institute of Solid State Physics, Nanjing 210008, P.R. China
Zhang Rong
Affiliation:
Department of Physics and Institute of Solid State Physics, Nanjing 210008, P.R. China
Gu Shulin
Affiliation:
Department of Physics and Institute of Solid State Physics, Nanjing 210008, P.R. China
Zhu Shunming
Affiliation:
Department of Physics and Institute of Solid State Physics, Nanjing 210008, P.R. China
Hu Lique
Affiliation:
Department of Physics and Institute of Solid State Physics, Nanjing 210008, P.R. China
Zheng Youdou
Affiliation:
Department of Physics and Institute of Solid State Physics, Nanjing 210008, P.R. China
Get access

Abstract

Using lithography, and selective etching the Si1-xGex/Si multiple quantum well wires are fabricated. The characteristics of the selective chemical etching of Si1-xGex and Si are investigated, and high-performance etchants are developed. The etchant composed of HF:NH4F:H202:NH4OH is used for the etching of the epitaxial Si1-xGex films, the selectivity is better than 250 for Si0.76Ge0.24, and increases with the increase of the mole fraction x of Ge. Another etchant composed of NH4NO3:NH4OH is used for the etching of Si, the selectivity is higher than 1000 ( x ≥ 0.1 ). A preliminary photoluminescence (PL) result obtained from the Si0.76Ge0.24 multiple quantum well wires is presented. As the linewidth of the wires is reduced down to 50 nm, an intense complicated PL spectrum in the wavelength range of 500∼800 nm is observed at liquid nitrogen temperature. The origin of such spectrum is unclear.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 379: Symposium C – Strained Layer Epitaxy–Materials, Processing, and Devise Applications , 1995 , 91
Copyright
Copyright © Materials Research Society 1995

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Usami, N., Fukatsu, S., and Shiraki, Y., Appl. Phys. Lett. 61, 1706 (1992).Google Scholar
2. Canham, L.T., Appl. Phys. Lett. 57, 1046 (1990).Google Scholar
3. Pearsall, T.P., Mater. Sci. Eng. B9, 225 (1991).Google Scholar
4. Tang, Y.S., Wilikinson, C.D.W., Torres, C.M. Sotomayor, Smith, D.W., Whall, T.E., and Parker, E.H.C., Solis State Commun. 85, 199(1993); Appl. Phys. Lett. 63, 497 (1993).Google Scholar
5. Fathauer, R.W., George, T., Jones, E.W., Pike, W.T., Ksendzov, A., and Vasquez, R.P., Appl. Phys. Lett. 61, 2350(1992)Google Scholar
6. Wang, J., Beton, P.H., Mori, N., Buhmann, H., Mansoui, L., Eaves, L., Main, P.C., Foster, T.J., and Henini, M., Appl. Phys. Lett. 65, 1124 (1994).Google Scholar
7. Koyama, K., Hirio, M., Tatsumi, T., and Hirayama, H., Appl. Phys. Lett. 57, 2202 (1990).Google Scholar
8. Chang, G.K., Carns, T.K., Rhee, S.S., and Wang, K.L., J.Electrochem. Soc. 138, 202 (1991).Google Scholar
9. Gobery, D.J., Krist, A.H., and Twigg, M.E., J. Electrochem. Soc. 139, 2943 (1992).Google Scholar
10. Narozny, P., Hamacher, M., Dambkes, H., and Kasper, E., Tech. Dig. IEDM 88, 562 (1988).Google Scholar
11. Zheng, Y., Zhang, R., Hu, L.Q., Gu, S.L., Wang, R., Han, P., and Jiang, R.L., in Mechanism of Heteroepitaxial Growth, edited by Chisholm, M. F., Hull, R., Schowalter, L.J., and Garrison, B.J. (Mater. Res. Soc. Proc. 263, Pittsburgh, PA, 1992) pp.227–232.Google Scholar
12. Higashi, G.S., Chabal, Y.J., and Raghvachari, K., Appl. Phys. Lett. 56, 656 (1990).Google Scholar