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A Simple Explanation on the Crystallization Kinetics of a Cw Laser Crystallization of Amorphous Silicon

Published online by Cambridge University Press:  17 March 2011

Seong Jin Park ,
Sang Hoon Kang ,
Yu Mi Ku  and
Jin Jang
Seong Jin Park
Affiliation:
Advanced Display Research Center, Kyung Hee University, Seoul 130-701, Korea
Sang Hoon Kang
Affiliation:
Advanced Display Research Center, Kyung Hee University, Seoul 130-701, Korea
Yu Mi Ku
Affiliation:
Advanced Display Research Center, Kyung Hee University, Seoul 130-701, Korea
Jin Jang
Affiliation:
Advanced Display Research Center, Kyung Hee University, Seoul 130-701, Korea
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Abstract

We have studied a CW laser crystallization (CLC) of various-shaped a-Si patterns on glass with changing scanning speed and laser power. The crystallized region inside the patterns showed 3 distinct regions, which is distinguished by their grain size; fine grains of several tens of nanometers near the edge of the pattern, very large grains over a few micrometers at the center of the pattern, so called Sequential Lateral Crystallization region and large grains about a micrometer or less between SLC and fine grain regions. This phenomenon is due to the formation of 2-D temperature gradient inside the pattern. One is the temperature gradient between the edge and center; the temperature of outer region is lower than that of inner region during or right after a CW laser scanning. The other is the temperature gradient along the scan direction; the temperature of starting region of a CW laser scanned area is lower than that of ending region. The former contributes mainly to make molten silicon area inside a pattern, and the latter induces lateral growth along the scan direction to make long grains in SLC region.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 814: Symposium I – Flexible Electronics 2004-Materials and Device Technology , 2004 , I2.3/A3.3
Copyright
Copyright © Materials Research Society 2004

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