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Simulations of Electromigration At A Tungsten/Aluminum Junction

Published online by Cambridge University Press:  10 February 2011

A. Enver  and
G. L. Povirk
A. Enver
Affiliation:
Digital Semiconductor, Hudson, MA
G. L. Povirk
Affiliation:
Department of Mechanical Engineering, Yale University, New Haven, CT 06520
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Abstract

Finite element solutions to problems of electromigration and stress-driven diffusion are presented. The numerical procedures are based on a formulation that assumes bulk diffusion, so that diffusion along grain boundaries and interfaces is not explicitly taken into account. Two cases are considered: (1) a tungsten via/aluminum line junction, and; (2) a one-dimensional case with a blocking boundary at one end of the line. The results show that line geometry can significantly affect the magnitude of the stresses that develop, although in each case the maximum hydrostatic stress in the line was proportional to the square root of time.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 505 , 1997 , 131
Copyright
Copyright © Materials Research Society 1998

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References

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