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Single Shockley Faults Evolution Under UV Optical Pumping

Published online by Cambridge University Press:  01 February 2011

Andrea Canino ,
Massimo Camarda ,
Antonino La Magna  and
Francesco La Via
Andrea Canino
Affiliation:
andrea.canino.ct@gmail.com, CNR-IMM, IMM, Catania, Italy
Massimo Camarda
Affiliation:
massimo.camarda@imm.cnr.it, CNR-IMM, IMM, Catania, Italy
Antonino La Magna
Affiliation:
antonino.lamagna@imm.cnr.it, CNR-IMM, IMM, Catania, Italy
Francesco La Via
Affiliation:
francesco.lavia@imm.cnr.it, CNR-IMM, IMM, Catania, Italy
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Abstract

Single Shockley faults (SSF) have been studied in 4H-SiC epitaxial layers by using a spatial resolved micro-photoluminescence technique. In particular the effect of the UV pumping laser has been investigated. Samples have been irradiated at different power densities in order to find a threshold for the growth of the SSF defects. A low power density (115 W/cm2) exposition at 325 nm does not affect the structural properties of the epitaxial layers. We observed a growth of this defect through the epitaxial layers when the power density is increased over the value of 115 W/cm2.

Keywords

defectsopticalcrystal growth
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1246: Symposium B – Silicon Carbide 2010-Materials, Processing and Devices , 2010 , 1246-B03-06
Copyright
Copyright © Materials Research Society 2010

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References

1 Matsunami, H. and Kimoto, T., Mater. Sci. Eng. R. 20, 125 (1997).Google Scholar
2 Skowronski, M. and Ha, S., J. Appl. Phys. 99, 011101 (2006).Google Scholar
3 Feng, G., Suda, J., and Kimoto, T., Appl. Phys. Lett. 92, 221906 (2008).Google Scholar
4 Feng, G., Suda, J., and Kimoto, T., Appl. Phys. Lett. 94, 091910 (2009).Google Scholar
5 Miyanegi, T., Tsuchida, H., Kamata, I., Nakamura, T., Nakayama, K., Ishii, R. and Sugawara, Y., Appl. Phys. Lett. 89, 062104 (2006).Google Scholar
6 Canino, A., Camarda, M. and Via, F. La, Mater. Sci. Forum 645–648, 555–558 (2010).Google Scholar
7 Via, F. La, Izzo, G., Mauceri, M., Pistone, G., Condorelli, G., Perdicaro, L., Abbondanza, G., Calcagno, L., Foti, G., and Crippa, D., J. of Crystal Growth 311, 107 (2008).Google Scholar