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Single shot excimer laser annealing of amorphous silicon: effect of hydrogen on the properties of the poly silicon

Published online by Cambridge University Press:  15 February 2011

P. Boher ,
M. Stehle ,
B. Godard  and
J.L. Stehle
P. Boher
Affiliation:
SOPRA S.A., 26 rue Pierre Joigneaux, 92270 Bois-Colombes (France)
M. Stehle
Affiliation:
SOPRA S.A., 26 rue Pierre Joigneaux, 92270 Bois-Colombes (France)
B. Godard
Affiliation:
SOPRA S.A., 26 rue Pierre Joigneaux, 92270 Bois-Colombes (France)
J.L. Stehle
Affiliation:
SOPRA S.A., 26 rue Pierre Joigneaux, 92270 Bois-Colombes (France)
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Abstract

PECVD amorphous silicon films deposited at different temperatures on low cost glass substrates have been treated by a Single Shot Excimer Laser Annealing (SSELA) at various energy densities. The influence of a thermal treatment at medium temperature (400°C) prior to the SSELA treatment was also investigated. Spectroscopie ellipsometry and Raman characterizations show that hydrogen contamination produces an important roughness increase with very little polycrystalline grains (650nm) after laser treatment. The thermal treatment prior laser annealing improves drastically the structural quality of the films. Structural results are correlated with the electrical performances of the TFT produced on these films.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 397: Symposium B – Advanced laser Processing of Materials-Fundamentals and Applications , 1995 , 417
Copyright
Copyright © Materials Research Society 1996

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References

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