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Single Source CVD of LiAlO2

Published online by Cambridge University Press:  10 February 2011

Wonyong Koh ,
Su-Jin Ku  and
Yunsoo Kim
Wonyong Koh
Affiliation:
Advanced Materials Division, KRICT, 100 Chang-dong, Yusong-gu, Taejon 305–343, SOUTH KOREA, yunsukim@pado.krict.re.kr
Su-Jin Ku
Affiliation:
Advanced Materials Division, KRICT, 100 Chang-dong, Yusong-gu, Taejon 305–343, SOUTH KOREA, yunsukim@pado.krict.re.kr
Yunsoo Kim
Affiliation:
Advanced Materials Division, KRICT, 100 Chang-dong, Yusong-gu, Taejon 305–343, SOUTH KOREA, yunsukim@pado.krict.re.kr
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Abstract

We successfully deposited LiAlO2 films on Si substrates at 400–600 °C by single source chemical vapor deposition using a heterometallic compound, Li(O'Pr)2Al(CH3)2, which contains Li, Al, and O at the same 1:1:2 ratio as LiAlO2. Li(O'Pr)2Al(CH3)2 is sufficiently volatile to be vapor-transported at 50 °C. Elastic recoil detection and Rutherford backscattering spectroscopy analyses of a deposited film indicate that the film is stoichiometric (Li:Al:O = 1.0:1.0:2.0) and contains a few atomic percent hydrogen (5 %) and carbon (2 %). Depth profile analysis of X-ray photoelectron spectroscopy also confirms the 1:1 ratio of metal contents in the films. As-deposited films were amorphous, however, crystallized to β- or γ-LiA1O2 after annealing at 950 °C.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 495: Symposium W – Chemical Aspects of Electronic Ceramics Processing , 1997 , 69
Copyright
Copyright © Materials Research Society 1998

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References

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