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Single-Shot Excimer-Laser Crystallization of an Ultra-Large Si Thin-Film Disk

Published online by Cambridge University Press:  14 March 2011

Mitsuru Nakata ,
Chang-Ho Oh  and
Masakiyo Matsumura
Mitsuru Nakata
Affiliation:
Department of Physical Electronics, Tokyo Institute of Technology, 2-12-1 O-okayama, Meguro-ku, Tokyo 152-8550, Japan, E-mail : nakata@silicon.pe.titech.ac.jp URL : http://silicon.pe.titech.ac.jp/
Chang-Ho Oh
Affiliation:
Department of Physical Electronics, Tokyo Institute of Technology, 2-12-1 O-okayama, Meguro-ku, Tokyo 152-8550, Japan, E-mail : nakata@silicon.pe.titech.ac.jp URL : http://silicon.pe.titech.ac.jp/
Masakiyo Matsumura
Affiliation:
Department of Physical Electronics, Tokyo Institute of Technology, 2-12-1 O-okayama, Meguro-ku, Tokyo 152-8550, Japan, E-mail : nakata@silicon.pe.titech.ac.jp URL : http://silicon.pe.titech.ac.jp/
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Abstract

An excimer-laser-induced large-grain growth method has been proposed which utilizes non-uniform heat diffusion along the Si thin-film and also along the underlayer. A single-shot of KrF excimer-laser light pulse with uniform intensity could crystallize a circularly pre-patterned Si thin-film of 20νm in diameter, much larger than TFT feature size in present AM-LCD panels.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 621: Symposia Q/R – Electron-Emissive Materials, Vacuum Microelectronics… , 2000 , Q7.3.1
Copyright
Copyright © Materials Research Society 2000

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References

REFERENCES

1. Ishihara, R. and Matsumura, M., Jpn. J. Appl. Phys., 36, p. 6167 (1997)Google Scholar
2. Crowder, M. A., Carey, P. G., Smith, P. M., Sposili, R. S., Cho, H. S., and Im, J. S., IEEE ED. Lett., 19 (8), p. 306 (1998)Google Scholar
3. Matsumura, M., Phys. Stat. Sol. (a) 166, p. 715 (1998)Google Scholar
4. Oh, C. H., Ozawa, M. and Matsumura, M., Jpn. J. Appl. Phys., 37, p. L492 (1998)Google Scholar
5. Oh, C. H. and Matsumura, M., Jpn. J. Appl. Phys., 37, p. 5474 (1998)Google Scholar
6. Matsumura, M. and Oh, C. H., Thin Solid Films, 337, p. 123 (1999)Google Scholar
7. Ozawa, M., Oh, C. H. and Matsumura, M., Jpn. J. Appl. Phys., 38, p. 5700 (1999)Google Scholar