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The Size Distribution of Ge Nanocrystals in Implanted and Annealed Silica

Published online by Cambridge University Press:  21 March 2011

Annette R. Dowd ,
David Llewellyn ,
John D. Fitz Gerald  and
Robert G. Elliman
Annette R. Dowd
Affiliation:
Electronic Materials Engineering Department, Research School of Physical Sciences and Engineering, Australian National University, ACT 0200, Canberra, Australia
David Llewellyn
Affiliation:
Electron Microscopy Unit, Australian National University, ACT 0200, Canberra, Australia
John D. Fitz Gerald
Affiliation:
Research School of Earth Sciences, Australian National University, ACT 0200, Canberra, Australia
Robert G. Elliman
Affiliation:
Electronic Materials Engineering Department, Research School of Physical Sciences and Engineering, Australian National University, ACT 0200, Canberra, Australia
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Abstract

This study examines the effect of implantation and annealing parameters on the formation of Ge crystallites in ion-implanted silica. Samples were implanted at room temperature or −196oC with 1.0 MeV Ge+ ions to fluences in the range from 0.6 to 3×1017 Ge.cm−2. Ge nanocrystals were not observed in samples implanted at −196°C but were observed in samples irradiated at room temperature. Nanocrystals were observed in all samples after annealing and their size distribution was found to be almost independent of the implant fluence. The distributions were also shown to be asymmetrical with depth, with smaller nanocrystals located on the near-surface side of the implant distribution.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 650: Symposium R – Microstructural Processes in Irradiated Materials-2000 , 2000 , R3.39
Copyright
Copyright © Materials Research Society 2001

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References

REFERENCES

1. Atwater, H. A., Shcheglov, K. V., Wong, S. S., Vahala, K. J., Flagan, R. C., Brongersma, M. L., and Polman, A., Mat. Res. Soc. Symp. Proc 316, 409 (1993).Google Scholar
2. Zhu, J. G., White, C. W., Budai, J. D., Withrow, S. P., and Chen, Y., J. Appl. Phys. 78, 4386 (1995).Google Scholar
3. Haglund, R. F. Jr, Mater. Sci. Eng. A A253, 275 (1997).Google Scholar
4. Stepanov, A. L., Hole, D. E., and Townsend, P. D., J. Non Cryst. Solids 260, 1 (1999).Google Scholar
5. Dowd, A., Elliman, R. G., Samoc, M., and Luther-Davies, B., Appl. Phys. Lett. 74, 239 (1999).Google Scholar
6. Vijayalakshmi, S., Shen, F., Zhang, Y., George, M. A., and Grebel, H., Mat. Res. Soc. Symp. Proc. 358, 527 (1998).Google Scholar
7. Borany, J. von, Heinig, K.-H., Grätzschel, R., Klimenkov, M., Strobel, M., Stegemann, K.-H., and Thess, H.-J., Microelectron. Eng. 48, 231 (1999).Google Scholar
8. Markwitz, A., Rebohle, L., Hofmeister, H., and Skorupa, W., Nucl. Instr. Meth. B147, 361 (1999).Google Scholar
9. J. Säderlund, Kiss, L. B., Niklasson, G. A., and Granqvist, C. G., Phys. Rev. Lett. 80, 2386 (1998).Google Scholar
10. Yorikawa, H. and Muramatsu, S., Appl. Phys. Lett. 71, 644 (1997).Google Scholar
11. Borany, J. von, Grätzschel, R., Heinig, K. H., Markwitz, A., Matz, W., Schmidt, B., and Skorupa, W., Appl. Phys. Lett. 71, 3215 (1997).Google Scholar
12. Zhang, J. Y., Ye, Y. H., and Tan, X. L., Appl. Phys. Lett. 74, 2459 (1999).Google Scholar