Hostname: page-component-cd9895bd7-dzt6s Total loading time: 0 Render date: 2024-12-29T14:44:34.968Z Has data issue: false hasContentIssue false
  • English
  • Français

The size effect of the polarization of SrBi2Ta2-xNbxO9 Capacitor

Published online by Cambridge University Press:  21 March 2011

Keisuke Tanaka ,
Masamichi Azuma ,
Yasuhiro Shimada ,
Tatsuo Otsuki  and
Carlos A. Paz de Araujo
Keisuke Tanaka
Affiliation:
Panasonic Semiconductor Development Company, Colorado Springs, CO, USA Semiconductor Company, Matsushita Electric Industrial Co., Ltd., Takatsuki, Osaka, Japan
Tatsuo Otsuki
Affiliation:
Semiconductor Company, Matsushita Electric Industrial Co., Ltd., Takatsuki, Osaka, Japan
Carlos A. Paz de Araujo
Affiliation:
Symetrix Corporation, Colorado Springs, CO, USA
Get access

Abstract

It is known that the ferroelectric characteristic drastically changes between the bulk crystal state and the thin film state, fabricated for the high density FeRAM. Therefore, the theoretical clarification of the high density FeRAM characteristic has become very important to realize the next generation FeRAM devices on time.

The size dependence of the polarization of SrBi2Ta2-xNbxO9 (SBTN) ferroelectric capacitor was calculated in the two-dimensional capacitor system considered with two different mechanisms, the depolarization effect and the surface effect due to the change of the long-range interaction between the polarization in the vicinity of the surface and interface. The free energy expression of thepolarization is described as a function of position of polarization using the Landau phenomenological theory.

The simulations of the size effect of the polarization were performed. The simulated result shows that the polarization is stable down to capacitor size of 0.01um2 which can be applied for next generation FeRAM devices.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 672: Symposium O – Mechanisms of Surface and Microstructure Evolution in Deposited Films and Film Structures , 2001 , O9.6
Copyright
Copyright © Materials Research Society 2001

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Fujii, E. et al,. IEDM Dig. Of Tech. Papers, p 597 (1997).Google Scholar
2. Ishikawa, K., Yoshikawa, K. and Okada, N., Phys. Rev. B: 37, 5852 (1988).Google Scholar
3. Scott, J. F., Phase Transit. 30, 107 (1991).Google Scholar
4. Zhong, W. L. et al,. Phys. Rev. B: 50, 698 (1994).Google Scholar
5. Tilley, D. R., Finite-size Effects on Phase Transitions in Ferroelectrics, Ferroelectric Thin Films; Synthesis and Basic Properties, ed. Araujo, C. P. et al,. (Gordon and Breach, 1996) pp. 11–45.Google Scholar
6. Kretshmer, R. and Binder, K., Phys. Rev. B: 20, 1065 (1979).Google Scholar
7. Zhong, W. L. et al,. J. Phys. Condens. Matter 5, 2619 (1993).Google Scholar
8. Uchino, K. et al,. J. Am. Ceram. Soc. 72, 1555 (1989).Google Scholar