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Size-dependent Temperature Instability in NiO–based Resistive Switching Memory

Published online by Cambridge University Press:  01 February 2011

Daniele Ielmini ,
Federico Nardi ,
Carlo Cagli  and
Andrea L. Lacaita
Daniele Ielmini
Affiliation:
ielmini@elet.polimi.it, Politecnico di Milano, Dipartimento di Elettronica e Informazione, Milano, Italy
Federico Nardi
Affiliation:
nardi@elet.polimi.it, Politecnico di Milano, Milano, MI, Italy
Carlo Cagli
Affiliation:
cagli@elet.polimi.it, Politecnico di Milano, Milano, MI, Italy
Andrea L. Lacaita
Affiliation:
lacaita@elet.polimi.it, Politecnico di Milano, Milano, MI, Italy
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Abstract

Resistive switching memory (RRAM) is attracting a strong interest as novel nonvolatile memories for high-density storage. Anyway this technology has to overcome two main issues before its use in real applications which are the high current needed for program operations and data retention stability. These two problems are here investigated from experimental and theoretical points of view to clarify the possibilities of NiO RRAMs to become a real competitive alternative to mainstream Flash technology.

Keywords

metal-insulator transitionoxideelectrical properties
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1250: Symposium G – Materials and Physics for Nonvolatile Memories II , 2010 , 1250-G05-03
Copyright
Copyright © Materials Research Society 2010

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