Hostname: page-component-cd9895bd7-fscjk Total loading time: 0 Render date: 2024-12-27T11:19:17.398Z Has data issue: false hasContentIssue false
  • English
  • Français

Slurry Particle Agglomeration Model for Chemical Mechanical Planarization (CMP)

Published online by Cambridge University Press:  01 February 2011

Joy Marie Johnson  and
Duane Boning
Joy Marie Johnson
Affiliation:
joyj@mit.edujoymariejohnson@gmail.com, Massachusetts Institute of Technology, Electrical Engineering & Computer Science, Cambridge, Massachusetts, United States
Duane Boning
Affiliation:
boning@mtl.mit.edu, Massachusetts Institute of Technology, Electrical Engineering & Computer Science, Cambridge, Massachusetts, United States
Get access

Abstract

In this work we propose a particle agglomeration model for chemical mechanical planarization (CMP) under the primary motivation of understanding the creation and behavior of the agglomerated slurry abrasive particles during the CMP process, which are a major cause of defectivity and poor consumable utility due to sedimentation.

The proposed model considers the slurry composition as a colloidal suspension of charged colloidal silica in an electrically neutral aqueous electrolyte. First, a theoretical relationship between the measurable chemical parameters of the slurry's aqueous electrolyte, the surface potential of the abrasive particles, and corresponding zeta potential between the agglomerated abrasive particles is presented. Secondly, this zeta potential is used in a modified DVLO interaction potential model to determine the particle interaction potentials due to both the attractive van Der Waals forces and repulsive electrostatic interactions. Finally, the total interaction potential created is then used to define a stability ratio for slow versus fast agglomeration and corresponding agglomeration rate equations between particles; these are used in a discrete population balance framework to describe the final particle size distribution with respect to time and agglomerate composition.

The proposed model will provide both a qualitative and quantitative description of agglomeration of abrasive slurry particles during CMP that can be extended to account for slurry composition or abrasive particle type, enabling more accurate process control, increased consumable utility, and possible defectivity reduction.

Keywords

CMPslurrycolloid
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1249: Symposia E/F – Advanced Interconnects and Chemical Mechanical Planarization for Micro-and Nanoelectronics , 2010 , 1249-E04-03
Copyright
Copyright © Materials Research Society 2010

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1 Chang, F.C. Tanawade, S. and Singh, R. K. J. Electrochem. Soc., 156, H39 (2009).Google Scholar
2 Biswas, R. Han, Y. Karra, P. Sherman, P. and Chandra, A. J. Electrochem. Soc., 155, D534–D537 (2008).Google Scholar
3 Moinpour, M. Tregub, A. Oehler, A. and Cadien, K., Mater. Res. Bulletin 766, (2002).Google Scholar
4 Chang, F.C. and Singh, R. K. J. Electrochem. Solid-State Lett., 12, H127–H130 (2009).Google Scholar
5 Mazaheri, A. R. and Ahmadi, G. J. Electrochem. Soc., 150, G233–G239 (2003).Google Scholar
6 Ramarajan, S. Li, Y. Hariharaputhiran, M. Her, Y.S. and Babu, S. V. Electrochem. Solid-State Lett., 3 (5), 232–234 (2000).Google Scholar
7 Berli, C.L. A. Piaggio, M.V. Deiber, J. A. Electrophoresis 24, 1587–1595 (2003).Google Scholar
8 Briesen, Rollie, H. Sundmacher, K. J. Colloid Interface Sci. 336 (2), 551–564 (2009).Google Scholar
9 Verwey, E.J.W. and Overbeek, J.T.G. Theory of the Stability of Lyophobic Colloids, Elsevier, Amsterdam (1948).Google Scholar
10 Hogg, R. Healy, T.W. and Fuerstenau, D.W. Trans. Faraday Soc. 62 (1966), p. 1638.Google Scholar
11 Wiese, G.R. and Healy, T.W.. Trans. Faraday Soc. 66 (1970), p. 490.Google Scholar
12 Steigerwald, J. M. Muraka, S. P. and Guttmann, R. J. Chemical Mechanical Planarization of Microelectronical Materials, John Wiley and Sons, New York (1997).Google Scholar
13 Li, S. H. Miller, R. O.. Chemical Mechanical Polishing in Silicon Processing, Academic Press, California, (2000).Google Scholar
14 Elimelech, M. Gregory, J. Jia, X. and Williams, R. A. Particle Deposition and Aggregation, Butterworth-Heinemann, Oxford (1998).Google Scholar
15 Smoluchowski, M. von, Z. Phys. Chem., 92, 129 (1917).Google Scholar
16 Fuchs, N. Z. Phys. 89, 736 (1934).Google Scholar
17 Hamaker, H.C. Physica IV, 2, 1058 (1937).Google Scholar
18Brookhaven Instruments Corporation. http://www.bic.com/WhatisZetaPotential.html.Google Scholar