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Soft-chemistry Route to P-I-N Heterostructured Quantum Dot Electroluminescence Device: All Solution-processed Polymer-Inorganic Hybrid QD-EL Device

Published online by Cambridge University Press:  01 February 2011

Soon-Jae Kwon
Affiliation:
sjk.kwon@samsung.com, Samsung Advanced Institute of Technology, Display Device & Materials Lab, Mt. 14-1, Nongse-Dong, Giheung-Gu, Yongin-Si, 446-712, Korea, Republic of, +82-31-280-9383, +82-31-280-9349
Kyung-Sang Cho
Affiliation:
k-s.cho@samsung.com, Samsung Advanced Institute of Technology, Display Device & Materials Lab, Mt. 14-1, Nongse-Dong, Giheung-Gu, Yongin-Si, 446-712, Korea, Republic of
Byoung-Lyong Choi
Affiliation:
choibl@samsung.com, Samsung Advanced Institute of Technology, Display Device & Materials Lab, Mt. 14-1, Nongse-Dong, Giheung-Gu, Yongin-Si, 446-712, Korea, Republic of
Byung-Ki Kim
Affiliation:
bbkkkim@samsung.com, Samsung Advanced Institute of Technology, Display Device & Materials Lab, Mt. 14-1, Nongse-Dong, Giheung-Gu, Yongin-Si, 446-712, Korea, Republic of
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Abstract

p-i-n heterostructured quantum-dot electroluminescence (QD-EL) device was fabricated by soft-chemical process, which shows a low turn-on voltage comparable to OLEDs. To construct the multilayered device structure, p-type polymer semiconductor was deposited on the ITO glass by sequential process of coating and thermal curing, thereupon a few monolayers of QD was spin-coated. n-type metal-oxide film was deposited on top of the QD luminescence layer by sol-gel method, providing a facile and low-cost route for the ETL fabrication. Prior to solution-processed ETL construction, a post-treatment is performed using cross-linking agent, in order to chemically-immobilize the QDs. As a cathodic electrode, relatively air-stable aluminum was deposited. The constituent material as well as the electronic band structure of the integrated device guarantees operating stability in air and low turn-on voltage.

Type
Research Article
Copyright
Copyright © Materials Research Society 2007

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References

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