Hostname: page-component-6bf8c574d5-2jptb Total loading time: 0 Render date: 2025-02-22T20:32:25.649Z Has data issue: false hasContentIssue false
  • English
  • Français

Solar-Blind AlGaN-based Schottky Photodiodes With High Detectivity and Low Noise

Published online by Cambridge University Press:  11 February 2011

Necmi Biyikli ,
Orhan Aytur ,
Ibrahim Kimukin ,
Turgut Tut  and
Ekmel Ozbay
Necmi Biyikli
Affiliation:
Department of Electrical and Electronics Engineering, Bilkent University, Bilkent Ankara 06533, TURKEY
Orhan Aytur
Affiliation:
Department of Electrical and Electronics Engineering, Bilkent University, Bilkent Ankara 06533, TURKEY
Ibrahim Kimukin
Affiliation:
Department of Physics, Bilkent University, Bilkent Ankara 06533, TURKEY
Turgut Tut
Affiliation:
Department of Physics, Bilkent University, Bilkent Ankara 06533, TURKEY
Ekmel Ozbay
Affiliation:
Department of Physics, Bilkent University, Bilkent Ankara 06533, TURKEY
Get access

Abstract

We report on the design, fabrication and characterization of solar-blind Schottky photodiodes with high detectivity and low noise. The devices were fabricated on n-/n+ AlGaN/GaN hetero-structures using a microwave compatible fabrication process. Using Al0.38Ga0.62N absorption layer, true solar-blind operation with a cutoff wavelength of ∼274 nm was achieved. The solar-blind detectors exhibited < 400 fA dark current in the 0–25 V reverse bias regime, and a maximum responsivity of 89 mA/W around 267 nm. The photovoltaic detectivity of the devices were in excess of 2.6×1012 cmHz1/2/W, and the detector noise was 1/f limited with a noise power density less than 3×10−29 A2/Hz at 10 KHz.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 743: Symposium L – GaN and Related Alloys , 2002 , L7.11
Copyright
Copyright © Materials Research Society 2003

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Schreiber, P., Dang, T., Smith, G., Pickenpaugh, T., Gehred, P., and Litton, C., Proc. SPIE 3629, 230 (1999).Google Scholar
2. Carrano, J. C., Li, T., Grudowski, P. A., Dupuis, R. D., and Campbell, J. C., IEEE Circuits & Devices Mag. 15, 15 (1999).Google Scholar
3. Walker, D., Zhang, X., Kung, P., Saxler, A., Javapour, S., Xu, J., and Razeghi, M., Appl. Phys. Lett. 68, 2100 (1996).Google Scholar
4. Lim, B. W., Chen, Q. C., Yang, J. Y., and Khan, M. Asif, Appl. Phys. Lett. 68, 3761 (1996).Google Scholar
5. Parish, G., Keller, S., Kozodoy, P., Ibbetson, J. P., Marchand, H., Fini, P. T., Fleischer, S. B., Denbaars, S. P., Mishra, U. K., and Tarsa, E. J., Appl. Phys. Lett. 75, 247 (1999).Google Scholar
6. Walker, D., Kumar, V., Mi, K., Sandvik, P., Kung, P., Zhang, X. H., and Razeghi, M., Appl. Phys. Lett. 76, 403 (2000).Google Scholar
7. Tarsa, E. J., Kozodoy, P., Ibbetson, J., Keller, B. P., Parish, G., and Mishra, U., Appl. Phys. Lett. 77, 316 (2000).Google Scholar
8. Lambert, D. J. H., Wong, M. M., Chowdhury, U., Collins, C., Li, T., Kwon, H. K., Shelton, B. S., Zhu, T. G., Campbell, J. C., and Dupuis, R. D., Appl. Phys. Lett. 77, 1900 (2000).Google Scholar
9. Brown, J. D., Li, J., Srinivasan, P., Matthews, J., and Schetzina, J. F., MRS Internet J. Nitride Semicond. Res. 5, 9 (2000)Google Scholar
10. Wong, M. M., Chowdhury, U., Collins, C. J., Yang, B., Denyszyn, J. C., Kim, K. S., Campbell, J. C., and Dupuis, R. D., Phys. Stat. Sol. (A) 188, 333 (2001).Google Scholar
11. Sandvik, P., Mi, K., Shahedipour, F., McClintock, R., Yasan, A., Kung, P., Razeghi, M., J. Crystal Growth 231, 366 (2001).Google Scholar
12. Parish, G., Hansen, M., Moran, B., Keller, S., Denbaars, S. P., and Mishra, U. K., Phys. Stat. Sol. (A) 188, 297 (2001).Google Scholar
13. Hirano, A., Pernot, C., Iwaya, M., Detchprohm, T., Amano, H., and Akasaki, I., Phys. Stat. Sol. (A) 188, 293 (2001).Google Scholar
14. Campbell, J. C., Collins, C. J., Wong, M. M., Chowdhury, U., Beck, A. L., and Dupuis, R. D., Phys. Stat. Sol. (A) 188, 283 (2001).Google Scholar
15. Duboz, J. Y., Reverchon, J. L., Adam, D., Damilano, B., Semond, F., Grandjean, N., and Massies, J., Phys. Stat. Sol. (A) 188, 325 (2001).Google Scholar
16. Li, T., Lambert, J. H., Beck, A. L., Collins, C. J., Yang, B., Wong, M. M., Chowdhury, U., Dupuis, R. D., and Campbell, J. C., J. Electronic Materials 30, 872 (2001).Google Scholar
17. Osinsky, A., Gangopadhyay, S., Lim, B. W., Anwar, M. Z., Khan, M. A., Kuksenkov, D. V., and Temkin, H., Appl. Phys. Lett. 72, 742 (1998).Google Scholar
18. Rumyantsev, S. L., Pala, N., Shur, M. S., Gaska, R., Levinshtein, M. E., Adivarahan, V., Yang, J., Simin, G., and Khan, M. Asif, Appl. Phys. Lett. 79, 866 (2001).Google Scholar
19. Adivarahan, V., Simin, G., Tamulaitis, G., Srinivasan, R., Yang, J., Khan, M. Asif, Shur, M. S., and Gaska, R., Appl. Phys. Lett. 79, 1903 (2001).Google Scholar
20. Monroy, E., Calle, F., Pau, J. L., Sanchez, F. J., Munoz, E., Omnes, F., Beaumont, B., and Gibart, P., J. Appl. Phys. 88, 2081 (2000).Google Scholar