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Solid-Phase Epitaxial Crystallisation Of GexSi1−x Alloy Layers

Published online by Cambridge University Press:  15 February 2011

Robert G. Elliman ,
Wah-Chung Wong  and
Per Kringhøj
Robert G. Elliman
Affiliation:
Electronic Materials Engineering Department, Research School of Physical Sciences and Engineering, Australian National University, Canberra, ACT 0200, AUSTRALIA.
Wah-Chung Wong
Affiliation:
Electronic Materials Engineering Department, Research School of Physical Sciences and Engineering, Australian National University, Canberra, ACT 0200, AUSTRALIA.
Per Kringhøj
Affiliation:
Electronic Materials Engineering Department, Research School of Physical Sciences and Engineering, Australian National University, Canberra, ACT 0200, AUSTRALIA.
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Abstract

Thermally-induced solid-phase epitaxial crystallisation (SPEC) andion-beam-induced epitaxial crystallisation (IBffiC) of amorphous GexSi1−x alloy layers is examined for threedifferent starting structures: a) strain-relaxed alloy layers of uniformcomposition, b) strained alloy layers of uniform composition, and c) Geimplanted Si layers. Thermal annealing experiments show that the activationenergy for strain-relaxed alloys is higher than that expected from a simpleextrapolation between the activation energies of Si and Ge, and exceeds thatof Si for x ≤ 0.3. Experiments on thin strained layers show that MBE grownstrained layers which are stable during annealing at 1100°C for 60 s arealso fully strained after SPEC, whereas layers which relax during annealingat 1100°C also relax during SPEC. Experiments on ion-implanted GexSi1−x structures show that fully strained Si/GexSi1−x/Si heterostructures can be fabricatedfor ion fluences below a critical fluence, and as for uniform alloy layersthat this critical fluence is accurately predicted by equilibrium theory.Strain relaxation during SPEC of uniform alloys and implanted structures isshown to be correlated with a sudden reduction in crystallisation velocitywhich is believed to be caused by stress-induced roughening or faceting ofthe crystalline/amorphous interface. SPEC of thick (800 nm) implanted layersis shown to be limited by competition from ion-beam induced randomcrystallisation, while thin (120 nm) uniform alloys and implanted structuresare shown to crystallise epitaxially and to exhibit similar behaviour tothermally annealed samples under certain conditions.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 321: Symposium E – Crystallization and Related Phenomena in Amorphous Materials—Ceramics, Metals, Polymers, and Semiconductors , 1993 , 375
Copyright
Copyright © Materials Research Society 1994

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References

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