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Some Properties of Ultra Thin Oxides Grown in Afterglow Oxygen Plasma

Published online by Cambridge University Press:  25 February 2011

P. C. Chen ,
J. Y. Lin ,
Y. J. Hsu  and
H. L. Hwang
P. C. Chen
Affiliation:
Department of Electrical Engineering, National Tsing Hua University, Hsin—chu, Taiwan, R.O.C.
J. Y. Lin
Affiliation:
Department of Electrical Engineering, Chung Cheng Institute of Technology, Ta—shj, Tao—yuan, Taiwan, R.O.C.
Y. J. Hsu
Affiliation:
IBM Thomas J. Watson Research Center, Yorktown Heights, New York, USA
H. L. Hwang
Affiliation:
Department of Electrical Engineering, National Tsing Hua University, Hsin—chu, Taiwan, R.O.C.
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Abstract

Microwave remote plasma oxidation were used to study the oxidation of Si and SiGe samples at a lower temperature. C–V measurements were performed to investigate the trap density, and the corresponding bonding structures of thin oxide were revealed by FTIR analysis. SIMS depth profiles were used to reveal the extent of the Ge segregation in SiGe samples. The system can grow ultra thin SiO2 with lower effective trap density. And Ge segregation can be largely suppressed by atomic oxygen oxidation at a lower temperature.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 268: Symposium K – Materials Modification by Energetic Atoms and Ions , 1992 , 157
Copyright
Copyright © Materials Research Society 1992

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References

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