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Spatial Distribution of Neutral EL2 as Measured Optically for Thin Semi-Insulating GaAs Wafers, and Relevance to Device Parameters

Published online by Cambridge University Press:  28 February 2011

P. Dobrilla ,
J. S. Blakemore ,
K. R. Gleason  and
A. J. McCamant
P. Dobrilla
Affiliation:
Oregon Graduate Center, Beaverton, OR 97006
J. S. Blakemore
Affiliation:
Oregon Graduate Center, Beaverton, OR 97006
K. R. Gleason
Affiliation:
Tektronix, Inc., Beaverton, OR 97077
A. J. McCamant
Affiliation:
Tektronix, Inc., Beaverton, OR 97077
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Abstract

Measurements are reported, for 0.5 mm thick semi-insulating (S.I.) GaAs wafers, of the neutral EL2 distribution, the pattern of dislocations, and of MESFET electrical parameters - these devices built on the same wafers. These results indicate that the device properties are more affected by EL2 nonuniformity than by dislocation density pattern.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 46: Symposium B – Microscopic Identification of Electronic Defects in Semiconductors , 1985 , 219
Copyright
Copyright © Materials Research Society 1985

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