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Spectral Response of GaN P-N Junction Photovoltaic Structures

Published online by Cambridge University Press:  21 February 2011

D. Walker ,
X. Zhang ,
P. Kung ,
A. Saxler ,
J. Xu  and
M. Razeghi
D. Walker
Affiliation:
Northwestern University, Center for Quantum Devices, EECS Department, Evanston, IL 60208
X. Zhang
Affiliation:
Northwestern University, Center for Quantum Devices, EECS Department, Evanston, IL 60208
P. Kung
Affiliation:
Northwestern University, Center for Quantum Devices, EECS Department, Evanston, IL 60208
A. Saxler
Affiliation:
Northwestern University, Center for Quantum Devices, EECS Department, Evanston, IL 60208
J. Xu
Affiliation:
Northwestern University, Center for Quantum Devices, EECS Department, Evanston, IL 60208
M. Razeghi
Affiliation:
Northwestern University, Center for Quantum Devices, EECS Department, Evanston, IL 60208
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Abstract

GaN ultraviolet photovoltaic and photoconductive detectors were grown on sapphire substrates by metalorganic chemical vapor deposition. The spectral response was analyzed considering the detector structure of a p-n junction connected back-to-back with a Schottkty barrier. Based on the one-dimensional model of abrupt p-n junctions, the diffusion length of minority carriers was derived to be about 0.1 μm in n-GaN. To further characterize the n-GaN material, photoconductivity experiments have also been realized. The majority carrier lifetime of about 0.1 ms was obtained by analyzing the voltage-dependent responsivity of GaN photoconductors The current-responsivity under a bias of 8 V was about 1 A/W.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 395: Symposium AAA – Gallium Nitride and Related Materials: The First International Symp , 1995 , 955
Copyright
Copyright © Materials Research Society 1996

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References

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