Hostname: page-component-745bb68f8f-g4j75 Total loading time: 0 Render date: 2025-02-05T21:30:35.915Z Has data issue: false hasContentIssue false
  • English
  • Français

Spectroscopic Evidence for Near-Neighbor Bonded H(D) in A-Si:N:H(D) Thin Films

Published online by Cambridge University Press:  10 February 2011

G. Lucovsky ,
P. Santos-Filho ,
A. Banerjee  and
Z. Jing
G. Lucovsky
Affiliation:
Departments of Physics, Materials Science and Engineering and Electrical and Computer Engineering, North Carolina State University, Raleigh, NC 27695-8202, (gerryjucovsky@ncsu.edu)
P. Santos-Filho
Affiliation:
Departments of Physics, Materials Science and Engineering and Electrical and Computer Engineering, North Carolina State University, Raleigh, NC 27695-8202, (gerryjucovsky@ncsu.edu)
A. Banerjee
Affiliation:
Departments of Physics, Materials Science and Engineering and Electrical and Computer Engineering, North Carolina State University, Raleigh, NC 27695-8202, (gerryjucovsky@ncsu.edu)
Z. Jing
Affiliation:
Departments of Physics, Materials Science and Engineering and Electrical and Computer Engineering, North Carolina State University, Raleigh, NC 27695-8202, (gerryjucovsky@ncsu.edu)
Get access

Abstract

Increases in the frequency of the silicon monohydride (Si-H) bond-stretching vibration in hydrogenated silicon nitrides, over and above what can be attributed to chemical induction effects, are shown to be generated by a repulsive interaction between the H-atom of the Si-H group, and a near-neighbor SiN-H group. This interaction increases the effective bond-stretching force constant of the H-atom of the Si-H group. This effect has been verified by ab-initio quantum chemistry calculations that have been used to calculate the energy of the H-atom of the Si-H group as a function of the relative separation between near-neighbor Si-H and SiN-H groups. Decreases in the bond-stretching frequencies of SiN-H groups in heavily hydrogenated nitrides are attributed to H-bonding effects associated with near-neighbor pairs of SiN-H groups.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 420: Symposium A – Amorphous Silicon Technology-1996 , 1996 , 503
Copyright
Copyright © Materials Research Society 1996

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Lucovsky, G., Solid State Commun. 29, 571 (1979).Google Scholar
2. Tsu, D.V., Lucovsky, G. and Davidson, B.N., Phys. Rev. B40, 1795 (1989).Google Scholar
3. Parsons, G.N. and Lucovsky, G., Phys. Rev. B41, 1664 (1990).Google Scholar
4. Tsu, D.V. and Lucovsky, G., J. Non-Cryst. Solids 97&98, 839 (1987).Google Scholar
5. Lucovsky, G., Ma, Y., He, S.S., Yasuda, T., Stephens, D.J. and Habermehl, S., Mater. Res. Soc. Symp. Proc. 284, 34 (1993).Google Scholar
6. Stevens, G., Santos-Filho, P., Habermehl, S. and Lucovsky, G., Mater. Res. Soc. Symp. Proc. 377, 313 (1995).Google Scholar
7. Lu, Z., Williams, M.J., Santos-Filho, P.F. and Lucovsky, G., J. Vac. Sci. Technol. A13 607 (1995).Google Scholar
8. Lucovsky, G., Yang, J., Chao, S.S., Tyler, J.E. and Czubatyj, W., J. Non-Cryst. Solids 59 & 60, 609 (1983).Google Scholar
9. Jing, Z., Lucovsky, G. and Whitten, J.L., J. Vac. Sci. Technol. B13, 1613 (1995).Google Scholar
10. Santos-Filho, P., Stevens, G., Lucovsky, G., Cull, T., Fedders, P., Leopold, D., and Norberg, R., J. Non-Cryst. Solids (1996), in press.Google Scholar