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Spectroscopic Study and Amorphous Film Deposition in RF and Pulsed Plasma Processings

Published online by Cambridge University Press:  22 February 2011

Kenji Ebihara ,
Seiji Kanazawa  and
Sadao Maeda
Kenji Ebihara
Affiliation:
Department of Electrical Engineering and Computer Science, Kumamoto University, Kurokami, Kumamoto City 860, Japan.
Seiji Kanazawa
Affiliation:
Department of Electrical Engineering and Computer Science, Kumamoto University, Kurokami, Kumamoto City 860, Japan.
Sadao Maeda
Affiliation:
Department of Electrical Engineering and Computer Science, Kumamoto University, Kurokami, Kumamoto City 860, Japan.
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Abstract

Processing plasmas generated by three types of discharges are diagnosed spectroscopically in order to estimate the quantitative relationship between plasma parameters and electrical and optical properties of deposited materials. An rf discharge is capacitively produced by a 13.56 MHz rf oscillator. A microwave generator operating at 2.45 GHz is used to supply power to a discharge cavity. Further a pulsed plasma which is inductively generated by pulsed current ( 70 kA peak ) is applied to study dissociation process in the transient plasma and possibility of a novel processing system. The gases used are methane for amorphous carbon formation and silane for amorphous silicon deposition. Measurements of optical emission spectrum are performed to estimate the processing plasma state by the relative spectral intensity method and the Doppler-broadening method.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 117: Symposium C – Process Diagnostics: Materials, Combustion, Fusion , 1988 , 67
Copyright
Copyright © Materials Research Society 1988

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