Hostname: page-component-6bf8c574d5-rwnhh Total loading time: 0 Render date: 2025-02-22T16:56:13.005Z Has data issue: false hasContentIssue false
  • English
  • Français

SPFM Pre-Cleaning for formation of Silicon Interfaces by Wafer Bonding

Published online by Cambridge University Press:  10 February 2011

Stefan Bengtsson  and
Karin Ljungberg
Stefan Bengtsson
Affiliation:
Solid State Electronics, Chalmers University of Technology, S-412 96 Göteborg, Sweden, stefan@ic.chalmers.se
Karin Ljungberg
Affiliation:
Mikroelektronik Centret, Technical University of Denmark, Bldg. 345e, DK-2800 Lyngby, Denmark
Get access

Abstract

The use of H2SO4:H2O2:HF (SPFM) at low HF concentrations (10 to 1000 ppm) has been investigated as the preparation procedure prior to formation of Si/Si interfaces by wafer bonding. The SPFM cleaning process makes it possible to form a hydrophilic (OH terminated) silicon surface, thereby achieving a spontaneous and strong room temperature bond. Electrical characterization using current vs voltage and spreading resistance measurements shows that this cleaning procedure can be used to form Si/Si junctions with excellent electrical properties. Some of the problems related to hydrophobic wafer bonding can thus be circumvented by the proposed technique.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 477 , 1997 , 267
Copyright
Copyright © Materials Research Society 1997

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Tong, Q.-Y. and Gösele, U., Materials Chem. Phys. 37, 101 (1994)10.1016/0254-0584(94)90080-9CrossRefGoogle Scholar
2. Bengtsson, S. and Engström, O., J. Appl. Phys. 66, 1231 (1989)CrossRefGoogle Scholar
3. Spierings, G.A.C.M. and Haisma, J., First Intl. Symp. on Semiconductor Wafer Bonding: Science, Technology and Applications, Eds. U. Gösele, J. Haisma, T. Abe, and M.A. Schmidt, PV 92–7 (The Electrochem. Soc. Proc. Series, Pennington, NJ, 1991), p. 18Google Scholar
4. Ljungberg, K., Söderbärg, A. and Bäcklund, Y., Appl. Phys. Lett. 62, 1362 (1993)CrossRefGoogle Scholar
5. Verhaverbeke, S., Messoussi, R. and Ohmi, T., Proc. Second Intl. Symp. on Ultra-Clean Processing of Silicon Surfaces (UCPSS'94), Eds. M. Heyns, M. Meuris and P. Mertens (Acco, Leuven, Belgium, 1994), p. 201Google Scholar
6. Ljungberg, K., Jansson, U., Bengtsson, S. and Söderbärg, A., J. Electrochem. Soc. 143, 1709 (1996)CrossRefGoogle Scholar
7. Namaki, A., Tanimoto, K., Nakamura, T., Murayama, M. and Suzaki, T., Surf. Sci. 203, 129 (1988)CrossRefGoogle Scholar
8. Maszara, W.P., Goetz, G., Caviglia, A. and McKitterick, J.B., J. Appl. Phys. 64, 4943 (1988)CrossRefGoogle Scholar
9. Ljungberg, K., Söderbärg, A., Bengtsson, S. and Jauhiainen, A., J. Electrochem. Soc. 141, 562 (1994)CrossRefGoogle Scholar
10. Bengtsson, S., Andersson, G.I., Andersson, M.O. and Engström, O., J. Appl. Phys. 72, 124 (1992)CrossRefGoogle Scholar