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Spontaneous and Piezoelectric Polarization Effects on the Frequency Response of Wurtzite Aluminium Gallium Nitride / Silicon Carbide Heterojunction Bipolar Transistors

Published online by Cambridge University Press:  01 February 2011

Choudhury Praharaj
Choudhury Praharaj*
Affiliation:
cjp1414@yahoo.com, Cornell University, Electrical Engineering, Cornell University, Ithaca, NY, 14853, United States
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Abstract

We present theoretical calculations for the effect of spontaneous and piezoelectric polarization on the base resistance and frequency response of wurtzite Aluminium Gallium Nitride / Silicon Carbide Heterojunction Bipolar Transistors. Heterojunction Bipolar Transistors ( HBTs ) built using wide band gap semiconductors with AlGaN emitter and SiC base/collector hold the promise of high-power and high-frequency operation due to lower impact ionization coefficients and higher breakdown voltages. Further, Silicon Carbide has an indirect bang gap, and a large lifetime of minority carriers compared to most other compound semiconductors, which tend to have direct band gaps. This reduces the base recombination factor when the base is made from SiC, and helps to achieve higher overall current gain. Spontaneous and piezoelectric polarizations of the order of 1013 electrons per cm2 exist in wurtzite wide band-gap semiconductors. This has a non-trivial effect on band profile, charge transport and overall device characteristics since the polarization-induced charges are of the same order of magnitude as the total dopant charge content of critical device layers, and can significantly affect the amount of mobile charge depletion or accumulation in these layers. We calculate the effect of this polarization for both very thin pseudomorphic emitters and for relaxed emitter structures. We present calculations for the cases of Si-face and C-face SiC, since the signs of polarization-induced charges are different for the two cases. The intrinsic base resistance near emitter flat-band conditions is changed by a factor of 10 depending on the alloy composition of the emitter and the polarity of growth. The maximum frequency of oscillation under emitter flat-band conditions can also be modulated by the polarization-induced charges by up to 60%. Our calculations show that the technologically less prevalent C-face SiC can give a higher advantage for frequency response, especially when the emitter thickness is larger than the critical thickness.

Keywords

piezoelectricnitridedevices
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1069: Symposium D – Silicon Carbide 2008—Materials, Processing and Devices , 2008 , 1069-D07-19
Copyright
Copyright © Materials Research Society 2008

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References

REFERENCES

1. Bernardini, F., F and Fiorentini, V., Nonlinear macroscopic polarization in III-V nitride alloys, Physical Review B (Condensed Matter and Materials Physics), 64, no.8 (2001)Google Scholar
2. Qteish, A., Heine, V. and Needs, R., Polarization, band lineups and stability of SiC polytypes, Physical Review B, Vol 45, no 12, pp 6534 (1992)Google Scholar
3. Ambacher, O., Majewski, J., Miskys, C., Link, A., Hermann, M., Eickoff, M., Stutzmann, M., Bernardini, F., Fiorentini, V., Tilak, V., Schaff, B. and Eastman, L.F., Journal of Physics: Condensed Matter, 14, 339–434 (2002)Google Scholar
4. Asbeck, P.M. et al, Enhancement of base conductivity via the piezoelectric effect in AlGaN/GaN HBTs, 44, Issue 2, pp 211–219 (2000)Google Scholar
5. Sherwin, M.E. and Drummond, T.J., Predicted elastic constants and critical layer thicknesses for cubic phase AlN, GaN and InN on β-SiC, Journal of Applied Physics, 69, no 12 (1991)Google Scholar
6. Danielsson, E. et al, The influence of band offsets on the IV characteristics for GaN/SiC heterojunctions, Solid State Electronics, 46, no. 6, 827–835, (2002)Google Scholar
7. Polyakov, A.Y. et al, Band line-up and mechanisms of current flow in n-GaN/p-SiC and n-AlgaN/p-SiC heterojunctions, Applied Physics Letters, 80, no. 18, pp 3352, (2002)Google Scholar