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SrBi2Ta2O9 Capacitors for a Mega-Bit Ferroelectric Nonvolatile Memory

Published online by Cambridge University Press:  10 February 2011

Kazushi Amanuma ,
Takemitsu Kunio  and
Joe Cuchiaro
Kazushi Amanuma
Affiliation:
Microelectronics Research Laboratories, NEC Corporation, Sagamihara 229, JAPAN
Takemitsu Kunio
Affiliation:
Microelectronics Research Laboratories, NEC Corporation, Sagamihara 229, JAPAN
Joe Cuchiaro
Affiliation:
Symetrix Corporation, 5055 Mark Dabling Blvd., Colorado Springs, CO 80918
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Abstract

SrBi2Ta2O9(SBT) capacitors were integrated to the structure for a mega-bit nonvolatile memory, and their electrical properties after metallization were investigated. Annealing above 500°C after contact-etching was necessary to obtain good electrical properties. A well saturated hysteresis loop with 2Pr of more than 15μC/cm2 was obtained for the 0.7×0.7μm capacitor. The read-out polarization was very stable in 105 sec after the write-pulse. No fatigue or imprint was observed up to 1011 cycles. These results show suitability of SBT capacitors for a mega-bit non-volatile memory.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 433: Symposium T – Ferroelectric Thin Films V , 1996 , 85
Copyright
Copyright © Materials Research Society 1996

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References

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