Hostname: page-component-6bf8c574d5-956mj Total loading time: 0 Render date: 2025-02-22T16:38:04.649Z Has data issue: false hasContentIssue false
  • English
  • Français

Sr/Si Template Formation for the Epitaxial Growth of SrTiO3 on Silicon

Published online by Cambridge University Press:  01 February 2011

Xiaoming Hu ,
Y. Liang ,
Yi Wei ,
J.L. Edwards Jr ,
R. Droopad ,
K. Moore  and
W.J. Ooms
Y. Liang
Affiliation:
Physical Science Research Laboratories - Motorola Labs, 7700 S. River Parkway, Tempe, Arizona 85284
Yi Wei
Affiliation:
Physical Science Research Laboratories - Motorola Labs, 7700 S. River Parkway, Tempe, Arizona 85284
J.L. Edwards Jr
Affiliation:
Physical Science Research Laboratories - Motorola Labs, 7700 S. River Parkway, Tempe, Arizona 85284
R. Droopad
Affiliation:
Physical Science Research Laboratories - Motorola Labs, 7700 S. River Parkway, Tempe, Arizona 85284
K. Moore
Affiliation:
Physical Science Research Laboratories - Motorola Labs, 7700 S. River Parkway, Tempe, Arizona 85284
W.J. Ooms
Affiliation:
Physical Science Research Laboratories - Motorola Labs, 7700 S. River Parkway, Tempe, Arizona 85284
Get access

Abstract

A novel silicon cleaning process using strontium metal thin films has been described. The silicon dioxide de-oxidation process using strontium as catalysts has been studied by X-ray Photoelectron Spectroscopy (XPS) and other in-situ techniques. A Sr/Si template for the epitaxial growth of SrTiO3 single crystals on silicon can be directly formed as a result of the above Sr-de-oxidation process. The de-oxidation mechanism can be explained after solving the interfacial structures of the Sr/SiO2/Si system with in-situ XPS.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 716: Symposium B – Silicon Materials-Processing, Characterization, and Reliability , 2002 , B6.2
Copyright
Copyright © Materials Research Society 2002

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

[1] Wallace, R.M., “A Grand Challenge for CMOS Scaling: Alternate Gate Dielectrics”, in Proceedings of the AVS 3rd International Conference on Microelectronics and Interfaces, February 11-14, 2002, Santa Clara, CA.Google Scholar
[2] Session Proceedings for “Atomic Layer Deposition” and “High-k Dielectrics” in Proceedings of the AVS 3rd International Conference on Microelectronics and Interfaces, February 11-14, 2002, Santa Clara, CA.Google Scholar
[3] Yu, Z., Ramdani, J., Curless, J. A., Finder, J. M., Overgaard, C. D., Droopad, R., Eisenbeiser, K. W., Hallmark, J. A., and Ooms, W. J., Conner, J. R. and Kaushik, V. S. “Epitaxial perovskite thin films grown on silicon by MBE”, Journal of Vacuum Science and Technology B18, 1653 (2000).Google Scholar
[4] Hu, Xiaoming, Yu, Z., Curless, J.A., Droopad, R., Eisenbeiser, K., Edwards, J.L. Jr, Ooms, W.J., Sarid, D., “Comparative study of Sr and Ba adsorption on Si(100)”, Applied Surface Science, 181, 103 (2001).Google Scholar
[5] Moulder, J.F., Stickle, W.F., Sobol, P.E., and Bomben, K.D., “Handbook of X-ray Photoelectron Spectroscopy”, Physical Electronics, Inc. 1995 Google Scholar
[6] Crist, B.V., “Handbook of Monochromatic XPS spectra”, vol. 1 “The Elements and Native Oxides”, XPS International, Inc. 1999 Google Scholar
[7] Barin, I., Knacke, O., and Kubaschewski, O., “Therochemical properties of inorganic substances” and its Supplement, Springer-Verlag, 1973 and 1977.Google Scholar
[8] Hubbard, K.J. and Schlom, D.G., “Thermodynamic stability of binary oxides in contact with silicon”, J. Mater. Res. 11, 2757 (1996), and references therein.Google Scholar